Carnegie Mellon STM / MBE Group Publications

  1. Atomic-scale and Electronic Properties of GaN/GaAs Superlattices
  2. Nanometer-scale studies of nitride/arsenide heterostructures produced by nitrogen plasma exposure of GaAs
  3. Morphological and compositional variations in strain-compensated InGaAsP/InGaP superlattices
  4. Reconstructions of the GaN(000-1) Surface
  5. Preparation of atomically flat surfaces on silicon carbide using hydrogen etching
  6. Scanning Tunneling Microscopy of the GaN(000-1) Surface
  7. Wurtzite GaN Surface Structures studied by Scanning Tunneling Microscopy and Reflection High Energy Electron Diffraction
  8. Strain variations in InGaAsP/InGaP superlattices studied by scanning probe microscopy
  9. Determination of Wurtzite GaN Lattice Polarity Based on Surface Reconstruction
  10. Scanning Tunneling Microscopy Observation of Surface Reconstruction of GaN on sapphire and 6H-SiC
  11. Reconstructions of GaN(0001) and (000-1) Surfaces: Ga-rich Metallic Structures
  12. GaN(0001) Surface Structures Studied Using Scanning Tunneling Microscopy and First-Principles Total Energy Calculations
  13. Compositional variations in strain-compensated InGaAsP/InAsP superlattices
  14. Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN(0001)
  15. Scanning Tunneling Microscopy Studies of InGaN Growth by Molecular Beam Epitaxy
  16. Scanning Tunneling Spectroscopy of Mott-Hubbard States on the 6H-SiC(0001) root(3) x root(3) Surface
  17. Scanning tunneling microscopy and spectroscopy of arsenic antisites in low temperature grown InGaAs
  18. Temperature Dependence of Molecular Beam Epitaxy of GaN on SiC (0001)
  19. Enhanced Group V Intermixing in InGaAs/InP Quantum Wells Studied by Cross-sectional Scanning Tunneling Microscopy
  20. Inversion of wurtzite GaN(0001) by exposure to magnesium
  21. Tunneling spectroscopy of the Si(111)2x1 surface
  22. Structure of Clean and Arsenic-covered GaN(0001) Surfaces
  23. Reconstructions of GaN and InGaN Surfaces
  24. Comparison of Electronic and Mechanical Contrast in Scanning Tunneling Microscopy Images of Semiconductor Heterojunctions
  25. Optimized structural properties of wurtzite GaN on SiC(0001) grown by molecular beam epitaxy
  26. Surface activity of magnesium during GaN molecular beam epitaxial growth
  27. TEM Study of the Morphology Of GaN/SiC (0001) Grown at Various Temperatures by MBE
  28. Surface structures and growth kinetics of InGaN(0001) grown by molecular beam epitaxy
  29. Spontaneous Formation of Indium-rich Nanostructures on InGaN(0001) Surfaces
  30. Surface Morphology of GaN Surfaces during Molecular Beam Epitaxy
  31. Properties of GaN epitaxial layers grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy
  32. Recent Developments in Scanning Tunneling Spectroscopy of Semiconductor Surfaces
  33. Arrangement of Nitrogen Atoms in GaAsN Alloys determined by Scanning Tunneling Microscopy
  34. InGaAs/InP quantum well intermixing studied by cross-sectional scanning tunneling microscopy
  35. Indium incorporation and surface segregation during InGaN growth by molecular beam epitaxy
  36. Distribution of Nitrogen Atoms in Dilute GaAsN and InGaAsN Alloys studied by Scanning Tunneling Microscopy
  37. Silicon on GaN(0001) and (000-1) Surfaces
  38. Buckling and band gap of the Ge(111)2x1 surface studied by low-temperature scanning tunneling microscopy
  39. Role of Ga-flux in dislocation reduction in GaN films grown on SiC(0001)
  40. Growth of GaN on SiC(0001) by Molecular Beam Epitaxy
  41. Scanning Tunneling Potentiometry of Semiconductor Junctions
  42. Structural Properties of GaN films grown by Molecular Beam Epitaxy on vicinal SiC(0001)
  43. Morphology and Effects of Hydrogen Etching of Porous SiC
  44. Low-temperature scanning tunneling spectroscopy of n-type GaAs(110) surfaces
  45. Review of Structure of Bare and Adsorbate-Covered GaN(0001) Surfaces
  46. Growth of GaN on porous SiC substrates by plasma-assisted molecular beam epitaxy
  47. Cross-Sectional Scanning Tunneling Microscopy Studies of Lattice-Matched InGaAs/InP Quantum Wells: Variations in Growth Switching Sequence
  48. Scanning Tunneling Microscopy Images of III-V Semiconductor Alloys: Strain Effects
  49. Morphology and surface reconstructions of GaN(1 -1 0 0) surfaces
  50. Growth of GaN on porous SiC and GaN substrates
  51. Morphology and surface reconstructions of m-plane GaN
  52. Electrostatic Potential for a Hyperbolic Probe Tip near a Semiconductor
  53. Surface reconstructions of AlN(0001)
  54. Plasma-assisted molecular beam epitaxy of GaN on porous SiC substrates with varying porosity
  55. Growth of GaN on porous SiC and GaN substrates
  56. Surface termination during GaN growth by metal-organic vapor phase epitaxy determined by ellipsometry
  57. Low Energy Electron Microscopy of Indium on Si(001) Surfaces
  58. Low-temperature Scanning Tunneling Spectroscopy of Semiconductor Surfaces
  59. Transport limitations in tunneling spectroscopy of Ge(111)c(2x8) surfaces
  60. Cross-sectional Scanning Tunneling Microscopy and Spectroscopy of InGaP/GaAs Heterojunctions
  61. Buckling of Si and Ge (111)2x1 Surfaces
  62. In-situ ellipsometry: Identification of surface terminations during GaN growth
  63. Growth and Surface Reconstructions of AlN(0001) Films
  64. Combined MOCVD and MBE growth of GaN on porous SiC
  65. Low-temperature tunneling spectroscopy of Ge(111)c(2x8) surfaces
  66. Dislocation density reduction in GaN using porous SiN interlayers
  67. Effects of Hydrogen during Molecular Beam Epitaxy of GaN
  68. Effects of Hydrogen on the Morphology and Electrical Properties of GaN grown by Plasma-assisted Molecular Beam Epitaxy
  69. Recents Developments in Surface Studies of GaN and AlN
  70. Scanning Tunneling Spectroscopy of Oxidized 6H-SiC Surfaces
  71. Band Gap of the Ge(111)c(2x8) Surface by Scanning Tunneling Spectroscopy
  72. Oxidized GaN(0001) Surfaces studied by Scanning Tunneling Microscopy and Spectroscopy and by First-Principles Theory
  73. Electronic States of Oxidized GaN(0001) Surfaces
  74. Influence of Tip-induced Band Bending on Tunneling Spectra of Semiconductor Surfaces
  75. Field effect in epitaxial graphene on a silicon carbide substrate
  76. Electronic States of Chemically Treated SiC Surfaces
  77. Growth of GaN on porous SiC by molecular beam epitaxy
  78. Molecular Dynamics and First-Principles Computations of Ga adlayers on GaN(0001)
  79. Band Offsets of InGaP/GaAs Heterojunctions by Scanning Tunneling Spectroscopy
  80. Step Formation on Hydrogen-etched SiC{0001} Surfaces
  81. Temperature-dependence of Epitaxial Graphene Formation on SiC(0001)
  82. Tunneling Spectroscopy of Graphene and related Reconstructions on SiC(0001)
  83. Novel Contrast Mechanism in Cross-Sectional Scanning Tunneling Microscopy of GaSb/GaAs Type-II Nanostructures
  84. Nucleation and Stoichiometry Dependence of rutile-TiO2(001)/GaN(0001) Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy
  85. Influence of surface states on tunneling spectra of n-type GaAs(110) surfaces
  86. A Prospective: Quantitative Scanning Tunneling Spectroscopy of Semiconductor Surfaces

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