Feenstra Group (Carnegie Mellon University)
Semiconductor Surfaces & Interfaces - Publications

2012 - 2015

115. Inelastic Effects in Low-Energy Electron Reflectivity of Two-dimensional Materials
114. Tunneling characteristics in chemical vapor deposited graphene hexagonal boron nitride graphene junctions
113. Theory of Graphene-Insulator-Graphene Tunnel Junctions
112. Friedel Oscillation-Induced Energy Gap Manifested as Transport Asymmetry at Monolayer-Bilayer Graphene Boundaries
111. Graphene Nucleation Density on Copper: Fundamental Role of Background Pressure
110. Spatially Resolved Mapping of Electrical Conductivity across Individual Domain (Grain) Boundaries in Graphene
109. Formation of a Buffer Layer for Graphene on C-face SiC{0001}
108. Atomic-Scale Mapping of Thermoelectric Power on Graphene: Role of Defects and Boundaries
107. Chapter from Landolt-Börnstein Review: Scanning Tunneling Microscopy
106. SymFET: A Proposed Symmetric Graphene Tunneling Field Effect Transistor
105. Low-Energy Electron Reflectivity of Graphene on Copper and other Substrates
104. Low-energy Electron Reflectivity from Graphene: First-Principles Computations and Approximate Models
103. Low-energy Electron Reflectivity from Graphene
102. Charge Transfer between Isomer Domains on n+-Doped Si(111)-2x1: Energetic Stabilization
101. Formation of Graphene on SiC(0001) Surfaces in Disilane and Neon Environments
100. Graphene on Carbon-face SiC{0001} Surfaces formed in a Disilane Environment
99. Interface Structure of Graphene on SiC(0001)
98. Single-Particle Tunneling in Doped Graphene-Insulator-Graphene Junctions
97. Graphene formed on SiC under various environments: Comparison of Si-face and C-face
96. Structure and Electronic Spectroscopy of Steps on GaAs(110) Surfaces

2008 - 2011

95. Quantitative Determination of Nanoscale Electronic Properties of Semiconductor Surfaces by Scanning Tunnelling Spectroscopy
94. Co-existence of negatively and positively buckled isomers on n+ doped Si(111)-2x1
93. Size, shape, composition, and electronic properties of InAs/GaAs quantum dots by scanning tunneling microscopy and spectroscopy
92. Comparison of Graphene Formation on C-face and Si-face SiC {0001} Surfaces
91. Electronic States of InAs/GaAs Quantum Dots by Scanning Tunneling Spectroscopy
90. Formation of Epitaxial Graphene on SiC(0001) using Vacuum or Argon Environments
89. The influence of the band structure of epitaxial graphene on SiC on the transistor characteristics
88. Thickness monitoring of graphene on SiC using low-energy electron diffraction
87. Morphology of Graphene on SiC(0001) Surfaces
86. A Prospective: Quantitative Scanning Tunneling Spectroscopy of Semiconductor Surfaces
85. Influence of surface states on tunneling spectra of n-type GaAs(110) surfaces
84. Nucleation and Stoichiometry Dependence of rutile-TiO2(001)/GaN(0001) Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy
83. Novel Contrast Mechanism in Cross-Sectional Scanning Tunneling Microscopy of GaSb/GaAs Type-II Nanostructures
82. Tunneling Spectroscopy of Graphene and related Reconstructions on SiC(0001)
81. Temperature-dependence of Epitaxial Graphene Formation on SiC(0001)
80. Step Formation on Hydrogen-etched SiC{0001} Surfaces
79. Band Offsets of InGaP/GaAs Heterojunctions by Scanning Tunneling Spectroscopy
78. Molecular Dynamics and First-Principles Computations of Ga adlayers on GaN(0001)
77. Growth of GaN on porous SiC by molecular beam epitaxy
76. Electronic States of Chemically Treated SiC Surfaces

2004 - 2007

75. Field effect in epitaxial graphene on a silicon carbide substrate
74. Influence of Tip-induced Band Bending on Tunneling Spectra of Semiconductor Surfaces
73. Electronic States of Oxidized GaN(0001) Surfaces
72. Oxidized GaN(0001) Surfaces studied by Scanning Tunneling Microscopy and Spectroscopy and by First-Principles Theory
71. Band Gap of the Ge(111)c(2x8) Surface by Scanning Tunneling Spectroscopy
70. Scanning Tunneling Spectroscopy of Oxidized 6H-SiC Surfaces
69. Recents Developments in Surface Studies of GaN and AlN
68. Effects of Hydrogen on the Morphology and Electrical Properties of GaN grown by Plasma-assisted Molecular Beam Epitaxy
67. Effects of Hydrogen during Molecular Beam Epitaxy of GaN
66. Dislocation density reduction in GaN using porous SiN interlayers
65. Low-temperature tunneling spectroscopy of Ge(111)c(2x8) surfaces
64. Combined MOCVD and MBE growth of GaN on porous SiC
63. Growth and Surface Reconstructions of AlN(0001) Films
62. In-situ ellipsometry: Identification of surface terminations during GaN growth
61. Buckling of Si and Ge (111)2x1 Surfaces
60. Cross-sectional Scanning Tunneling Microscopy and Spectroscopy of InGaP/GaAs Heterojunctions
59. Transport limitations in tunneling spectroscopy of Ge(111)c(2x8) surfaces

2000 - 2003

58. Low-temperature Scanning Tunneling Spectroscopy of Semiconductor Surfaces
57. Low Energy Electron Microscopy of Indium on Si(001) Surfaces
56. Surface termination during GaN growth by metal-organic vapor phase epitaxy determined by ellipsometry
55. Growth of GaN on porous SiC and GaN substrates
54. Plasma-assisted molecular beam epitaxy of GaN on porous SiC substrates with varying porosity
53. Surface reconstructions of AlN(0001)
52. Electrostatic Potential for a Hyperbolic Probe Tip near a Semiconductor
51. Morphology and surface reconstructions of m-plane GaN
50. Growth of GaN on porous SiC and GaN substrates
49. Morphology and surface reconstructions of GaN(1100) surfaces
48. Scanning Tunneling Microscopy Images of III-V Semiconductor Alloys: Strain Effects
47. Cross-Sectional Scanning Tunneling Microscopy Studies of Lattice-Matched InGaAs/InP Quantum Wells: Variations in Growth Switching Sequence
46. Growth of GaN on porous SiC substrates by plasma-assisted molecular beam epitaxy
45. Review of Structure of Bare and Adsorbate-Covered GaN(0001) Surfaces
44. Low-temperature scanning tunneling spectroscopy of n-type GaAs(110) surfaces
43. Morphology and Effects of Hydrogen Etching of Porous SiC
42. Structural Properties of GaN films grown by Molecular Beam Epitaxy on vicinal SiC(0001)
41. Scanning Tunneling Potentiometry of Semiconductor Junctions
40. Growth of GaN on SiC(0001) by Molecular Beam Epitaxy
39. Role of Ga-flux in dislocation reduction in GaN films grown on SiC(0001)
38. Buckling and band gap of the Ge(111)2x1 surface studied by low-temperature scanning tunneling microscopy
37. Silicon on GaN(0001) and (0001) Surfaces
36. Distribution of Nitrogen Atoms in Dilute GaAsN and InGaAsN Alloys studied by Scanning Tunneling Microscopy
35. Indium incorporation and surface segregation during InGaN growth by molecular beam epitaxy
34. InGaAs/InP quantum well intermixing studied by cross-sectional scanning tunneling microscopy
33. Arrangement of Nitrogen Atoms in GaAsN Alloys determined by Scanning Tunneling Microscopy
32. Recent Developments in Scanning Tunneling Spectroscopy of Semiconductor Surfaces
31. Properties of GaN epitaxial layers grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy
30. Surface Morphology of GaN Surfaces during Molecular Beam Epitaxy
29. Spontaneous Formation of Indium-rich Nanostructures on InGaN(0001) Surfaces
28. Surface structures and growth kinetics of InGaN(0001) grown by molecular beam epitaxy
27. TEM Study of the Morphology Of GaN/SiC (0001) Grown at Various Temperatures by MBE
26. Surface activity of magnesium during GaN molecular beam epitaxial growth
25. Optimized structural properties of wurtzite GaN on SiC(0001) grown by molecular beam epitaxy
24. Comparison of Electronic and Mechanical Contrast in Scanning Tunneling Microscopy Images of Semiconductor Heterojunctions
23. Reconstructions of GaN and InGaN Surfaces
22. Structure of Clean and Arsenic-covered GaN(0001) Surfaces

1996 - 1999

21. Tunneling spectroscopy of the Si(111)2x1 surface
20. Inversion of wurtzite GaN(0001) by exposure to magnesium
19. Enhanced Group V Intermixing in InGaAs/InP Quantum Wells Studied by Cross-sectional Scanning Tunneling Microscopy
18. Temperature Dependence of Molecular Beam Epitaxy of GaN on SiC (0001)
17. Scanning tunneling microscopy and spectroscopy of arsenic antisites in low temperature grown InGaAs
16. Scanning Tunneling Spectroscopy of Mott-Hubbard States on the 6H-SiC(0001) root(3) x root(3) Surface
15. Scanning Tunneling Microscopy Studies of InGaN Growth by Molecular Beam Epitaxy
14. Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN(0001)
13. Compositional variations in strain-compensated InGaAsP/InAsP superlattices
12. GaN(0001) Surface Structures Studied Using Scanning Tunneling Microscopy and First-Principles Total Energy Calculations
11. Reconstructions of GaN(0001) and (0001) Surfaces: Ga-rich Metallic Structures
10. Scanning Tunneling Microscopy Observation of Surface Reconstruction of GaN on sapphire and 6H-SiC
9. Determination of Wurtzite GaN Lattice Polarity Based on Surface Reconstruction
8. Strain variations in InGaAsP/InGaP superlattices studied by scanning probe microscopy
7. Wurtzite GaN Surface Structures studied by Scanning Tunneling Microscopy and Reflection High Energy Electron Diffraction
6. Scanning Tunneling Microscopy of the GaN(0001) Surface
5. Preparation of atomically flat surfaces on silicon carbide using hydrogen etching
4. Reconstructions of the GaN(0001) Surface
3. Morphological and compositional variations in strain-compensated InGaAsP/InGaP superlattices
2. Nanometer-scale studies of nitride/arsenide heterostructures produced by nitrogen plasma exposure of GaAs
1. Atomic-scale and Electronic Properties of GaN/GaAs Superlattices

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