Published in Phys. Rev. B 85, 041404(R) (2012).

Interface Structure of Graphene on SiC(0001)

N. Srivastava, Guowei He, Luxmi, R. M. Feenstra
Dept. Physics, Carnegie Mellon University, Pittsburgh, PA 15213

Abstract

Graphene films prepared by heating the SiC(0001) surface (the C-face of the {0001} surfaces) in vacuum or in a Si-rich environment are compared. It is found that different interface structures occur for the two situations. The former yields a well known 3×3 reconstructed interface, whereas the latter produces an interface with √43×√43-R±7.6° symmetry. This structure is shown to contain a graphene-like layer with properties similar to the 6√3×6√3-R30° "buffer layer" that forms on the Si(0001) surface (the Si-face).

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