Published in Mater. Res. Soc. Symp. Proc. 743, L4.1.1 (2003).
Morphology and surface reconstructions of m-plane GaN
C. D. Lee (a), R. M. Feenstra (a), J. E. Northrup (b),
L. Lymperakis (c), and J. Neugebauer (c)
(a) Department of Physics, Carnegie Mellon University, Pittsburgh, PA 15213
(b) Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304
(c) Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, D-14195 Berlin, Germany
Abstract
M-plane GaN(1 -1 0 0) is grown by plasma assisted molecular beam epitaxy on
ZnO(1 -1 0 0) substrates. A low-temperature GaN buffer layer is found to be
necessary to obtain good structural quality of the films. Well
oriented (1 -1 0 0) GaN films are obtained, with a slate like surface
morphology. On the GaN(1 -1 0 0) surfaces, reconstructions with symmetry of
c(2x2) and approximate "4x5" and are found under N- and Ga-rich
conditions, respectively. We propose a model for Ga-rich conditions
with the "4x5" structure consisting of monolayers of Ga terminating
the GaN surface.
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