Published in MRS Internet J. Nitride Semicond. Res. 3,12 (1998).
Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN(0001)
A. R. Smith, V. Ramachandran, R. M. Feenstra
Department of Physics,
Carnegie Mellon University, Pittsburgh, Pennsylvania 15213
D. W. Greve
Department of Electrical and Computer Engineering,
Carnegie Mellon University, Pittsburgh, Pennsylvania 15213
A. Ptak, T. H. Myers
Department of Physics, West Virginia University,
Morgantown, West Virginia 26506
W. L. Sarney, L. Salamanca-Riba
Department of Materials and Nuclear Engineering,
University of Maryland, College Park, Maryland 20742
M.-S. Shin, and M. Skowronski
Department of Materials Science and Engineering,
Carnegie Mellon University, Pittsburgh, Pennsylvania 15213
Abstract
Surface reconstructions during homoepitaxial growth of GaN(0001) are studied
using reflection high-energy electron diffraction and scanning tunneling
microscopy. In agreement with previous workers, a distinct transition
from rough to smooth morphology is seen as a function of Ga to N ratio
during growth. However, in contrast to some prior reports, no evidence for a
2x2 reconstruction during GaN growth is observed.
Observations have been made using four different nitrogen plasma sources,
with similar results in each case.
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