Proceedings of 3rd International Conference on Scanning Probe Spectroscopy,
published in Acta Physica Polonica A 104, 205 (2003).
Low-temperature Scanning Tunneling Spectroscopy of Semiconductor Surfaces
R. M. Feenstra (a), G. Meyer (b), F. Moresco (c) and K. H. Rieder (c)
(a)Department of Physics, Carnegie Mellon University, Pittsburgh, PA 15213
(b)Paul Drude Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany
(c)Institut fuer Experimentalphysik, Freie Universitaet Berlin,
Arnimallee 14, 14195 Berlin, Germany
Abstract
Low-temperature scanning tunneling spectroscopy measurements on
semiconductor surface are described. We consider both surface which do
not possess surface states within the bulk bandgap, such as GaAs(110),
and surfaces which do have states within the gap, such as Ge(111)2x1
and Ge(111)c(2x8). Band bending in the semiconductor due to the
electric field in the vacuum penetrating the semiconductor is found to
be a substantial effect in the former case. Transport limitations in
the semiconductor give rise to additional voltage drops, which can be
observed by making measurements over a wide range of tunnel current
magnitudes.
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