Published in MRS Internet J. Nitride Semicond. Res. 4S1, G9.5 (1999).

Scanning Tunneling Microscopy Studies of InGaN Growth by Molecular Beam Epitaxy

Huajie Chen,* A. R. Smith,* R. M. Feenstra,* D. W. Greve,** and J. E. Northrup***
*Department of Physics, Carnegie Mellon University, Pittsburgh, PA 15213
**Department of Electrical and Computer Engineering, Carnegie Mellon University
***Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304

Abstract

InGaN alloys with indium compositions ranging from 0-40% have been grown by molecular beam epitaxy. The dependence of the indium incorporation on growth temperature and group III/group V ratio has been studied. Scanning tunneling microscopy images, interpreted using first-principles theoretical computations, show that there is strong indium surface segregation on InGaN. Based on this surface segregation, a qualitative model is proposed to explain the observed indium incorporation dependence on the growth parameters.

Click here for preprint of paper, in pdf format.

Return to Home Page of Feenstra group