Published in IEEE Trans. Electron Devices 60, 951 (2013).
SymFET: A Proposed Symmetric Graphene Tunneling Field Effect
Transistor
Pei Zhao,1 Randall M. Feenstra,2 Gong Gu,3 and Debdeep Jena1
1Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556
2Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213
3Dept. Electrical Engineering and Computer Science, University of Tennessee, Knoxville, TN 37996
Abstract
In this work, an analytical model to calculate the
channel potential and current-voltage characteristics in a Symmetric
tunneling Field-Effect-Transistor (SymFET) is presented.
The current in a SymFET flows by tunneling from a n-type
graphene layer to a p-type graphene layer. A large current peak
occurs when the Dirac points are aligned at a particular drain-to-
source bias VDS. Our model shows that the current of the
SymFET is very weakly dependent on temperature. The resonant
current peak is controlled by chemical doping and applied gate
bias. The on/off ratio increases with graphene coherence length
and doping. The symmetric resonant peak is a good candidate
for high-speed analog applications, and can enable digital logic
similar to the BiSFET. Our analytical model also oers the
benefit of permitting simple analysis of features such as the
full-width-at-half-maximum (FWHM) of the resonant peak and
higher order harmonics of the nonlinear current. The SymFET
takes advantage of the perfect symmetry of the bandstructure
of 2D graphene, a feature that is not present in conventional
semiconductors.
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