Published in J. Vac. Sci. Technol. A 18, 1915 (2000).
Optimized structural properties of wurtzite GaN on SiC(0001)
grown by molecular beam epitaxy
V. Ramachandran and R. M. Feenstra
Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania
15213
W. L. Sarney and L. Salamanca-Riba
Materials and Nuclear Engineering Department, University of
Maryland, College Park, MD 20742-2115
D. W. Greve
Department of Electrical and Computer Engineering, Carnegie
Mellon University,
Pittsburgh, Pennsylvania 15213
Abstract
We have investigated optimal conditions for molecular beam epitaxial
growth of high quality GaN on 6H-SiC(0001) substrates. The quality of
these films is reflected in both the narrow x-ray peakwidths as well
as the excellent surface morphology. In this work, it is shown that
increasing growth temperature leads to an improvement in bulk quality
and lower x-ray peakwidth for both symmetric and asymmetric
reflections. We also note a marked improvement in surface morphology,
from a columnar appearance to a 2-D surface, under extremely Ga-rich
growth conditions.
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