Published in Appl. Phys. Lett. 82, 1793 (2003).
Morphology and surface reconstructions of GaN(1100) surfaces
C. D. Lee (a), R. M. Feenstra (a), J. E. Northrup (b),
L. Lymperakis (c), and J. Neugebauer (c)
(a) Department of Physics, Carnegie Mellon University, Pittsburgh, PA 15213
(b) Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304
(c) Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, D-14195 Berlin, Germany
Abstract
GaN is grown by plasma assisted molecular beam epitaxy on ZnO(1100)
substrates. Well-oriented (1100) GaN surfaces are obtained, and (1101)
oriented facets are also observed. On the GaN(1100) surfaces under
Ga-rich conditions a surface reconstruction with approximate symmetry
of "4×5" is found. A model is proposed in which this reconstruction
consists of >2 monolayers of Ga terminating the GaN surface.
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