Published in Appl. Phys. Lett. 78, 82 (2001).
Arrangement of Nitrogen Atoms in GaAsN Alloys
determined by Scanning Tunneling Microscopy
H. A. McKay*, R. M. Feenstra*, T. Schmidtling** and U. W. Pohl**
*Department of Physics, Carnegie Mellon University,
Pittsburgh, Pennsylvania 15213
**Technische Universitaet Berlin,
Hardenbergstr. 36, D-10623 Berlin, Germany
Abstract
The pair distribution function of nitrogen atoms in
GaAs0.983N0.017 has been determined by
scanning tunneling
microscopy. Nitrogen atoms in the first and third planes relative to
the cleaved (1 -1 0) surface are imaged. A modest enhancement in
the number of nearest-neighbor pairs particularly with [001]
orientation is found, although at larger separations the distribution
of N pair separations is found to be random.
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