Published in Phys. Rev. Lett. 82, 1000 (1999).
Scanning Tunneling Spectroscopy of Mott-Hubbard states on the
6H-SiC(0001) root(3) x root(3) Surface
V. Ramachandran and R. M. Feenstra
Department of Physics, Carnegie Mellon University, Pittsburgh, PA 15213
Abstract
Scanning tunneling spectra have been measured on the
6H-SiC(0001) root(3) x root(3) surface for both p- and n-type
material. With
the use of exceptionally low tunnel currents, the tunneling spectra
reveal distinct bands of empty and filled states, separated by 2.0 eV.
The states are located at the same spatial position, thereby
supporting a silicon adatom model which predicts a Mott-Hubbard type
density of states.
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