Published in MRS Internet J. Nitride Semicond. Res. 6, 11 (2001).
(This paper was presented at GaN Symposium of the MRS Fall 2000 Meeting, and
an abbreviated version of the paper has been published in the MRS Proceedings
for that Symposium).
Indium incorporation and surface segregation during InGaN growth
by molecular beam epitaxy: experiment and theory
Huajie Chen,* R. M. Feenstra,* J. E. Northrup,** T. Zywietz,*** J. Neugebauer,*** and D. W. Greve****
*Department of Physics, Carnegie Mellon University, Pittsburgh, PA 15213
**Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
***Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg
4-6, D-14195 Berlin, Germany
****Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA 15213
Abstract
InGaN alloys with (0001) or (000-1) polarities are grown by
plasma-assisted molecular beam epitaxy. Scanning tunneling microscopy
images, interpreted using first-principles theoretical computations,
show that there is a strong indium surface segregation on InGaN for
both (0001) and (000-1) polarities.
Evidence for the existence and stability of a structure containing
two adlayers of indium on the In-rich InGaN(0001) surface is reported.
The dependence on growth
temperature and group III/V ratio of indium incorporation in InGaN is
reported, and a quantitative model based on indium surface segregation
is proposed to explain the observed incorporation.
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