Published in Phys. Rev. B 66, 165204 (2002).
Low-temperature scanning tunneling spectroscopy of n-type GaAs(110) surfaces
R. M. Feenstra (a), G. Meyer (b), F. Moresco (c) and K. H. Rieder (c)
(a)Department of Physics, Carnegie Mellon University, Pittsburgh, PA 15213
(b)Paul Drude Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany
(c)Institut fuer Experimentalphysik, Freie Universitaet Berlin,
Arnimallee 14, 14195 Berlin, Germany
Abstract
Scanning tunneling spectroscopy is used to study n-type GaAs(110)
surfaces at temperatures near 10 K. Spectral lines associated with
surface accumulation layer states are observed.
Near dopant atoms, three additional lines are seen in the spectra.
These lines are identified with the donor states near the
conduction band minimum (seen at different voltages for tunneling
into and out of the states) and with a donorlike state derived from
the accumulation layer.
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