Published in Appl. Phys. Lett. 104, 123506 (2014).

Tunneling characteristics in chemical vapor deposited graphene – hexagonal boron nitride – graphene junctions

T. Roy,¹ L. Liu,² S. de la Barrera,³ B. Chakrabarti1,^1,4 Z. R. Hesabi,¹ C. A. Joiner,¹ R. M. Feenstra,³ G. Gu,² and E. M. Vogel¹
¹School of Materials Science and Engineering, Georgia Institute of Technology 771 Ferst Drive, Atlanta, GA 30332, USA
²Department of Electrical Engineering and Computer Science, University of Tennessee 1520 Middle Drive, Knoxville, TN 37996, USA
³Department of Physics, Carnegie Mellon University 5000 Forbes Ave., Pittsburgh, PA 15213 USA
⁴Department of Materials Science and Engineering, University of Texas at Dallas 800 West Campbell Rd., Richardson, TX 75080 USA

Abstract

Large area chemical vapor deposited graphene and hexagonal boron nitride was used to fabricate graphene – hexagonal boron nitride – graphene symmetric field effect transistors. Gate control of the tunneling characteristics is observed similar to previously reported results for exfoliated graphene – hexagonal boron nitride – graphene devices. Density-of-states features are observed in the tunneling characteristics of the devices, although without large resonant peaks that would arise from lateral momentum conservation. The lack of distinct resonant behavior is attributed to disorder in the devices, and a possible source of the disorder is discussed.

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