Published in Appl. Phys. Lett. 75, 808 (1999).
Inversion of wurtzite GaN(0001) by exposure to magnesium
V. Ramachandran and R. M. Feenstra
Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania
15213
W. L. Sarney and L. Salamanca-Riba
Materials and Nuclear Engineering Department, University of
Maryland, College Park, MD 20742-2115
J. E. Northrup and L. T. Romano
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo
Alto, California 94304
D. W. Greve
Department of Electrical and Computer Engineering, Carnegie
Mellon University, Pittsburgh, Pennsylvania 15213
Abstract
Magnesium incorporation during the molecular beam epitaxy growth of
wurtzite GaN is found to invert the Ga-polar (0001) face to the N-polar
face. The polarity is identified based on the two different sets of
reconstructions seen on the film prior to and after about 1 monolayer Mg
exposure. The inversion boundary is seen to lie on the (0001) plane
from transmission electron microscopy images, and a structural model
is presented for the inversion. On the Ga-polar face, Mg is also seen to
stabilize growth in the N-rich regime.
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