Professor of Materials Science and Engineering
Professor Skowronski obtained his Ph.D. degree in Solid State Physics from Warsaw University (Warsaw, Poland). His post-doctoral appointment was at Massachusetts Institute of Technology where he used junction spectroscopy to study compound semiconductors. This was followed by work at Cabot Corp. on growth of compound semiconductors. In 1988, he moved to Carnegie Mellon University where he focused on deposition of thin films for electronic applications, fabrication of energy efficient devices, and electron microscopy.
EducationPh.D., Warsaw University
We aim to discover, understand, and fabricate novel materials, phenomena, and device structures for information storage and processing. The overarching driving force for the group's research is increasing energy efficiency of next generation computing. Energy efficient information technology (IT) matters for the global energy usage: extrapolated growth of energy consumption by all forms of IT will equal global energy production by 2040 ("Rebooting the IT Revolution", 2015). Moreover, it limits the performance of all IT devices: the clock rate in laptops has not increased since 2005 due to "heat death" of the processor.
Research directions that can address these problems and are focus of group's activities include non-volatile memory and logic devices, neuromorphic (brain-like) computing, devices scalable beyond the current technology limits, and "More-than-Moore" electronics.
All projects are highly collaborative requiring interaction with and visits to other institutions. Ongoing collaborations include Intel, Micron, Oak Ridge National Laboratory, National Institute of Standards and Technology, Arizona State University and University of Michigan.
Rebooting the IT Revolution
"Scaling behavior of oxide-based electrothermal thershold switching devices", D. Li, J. M. Goodwill, J. A. Bain, and M. Skowronski, Nanoscale, (2017)
"ON state evolution in lateral and vertical VO2 threshold switching devices", D. Li, A. A. Sharma, N. Shukla, H. Paik, J. M. Goodwill, S. Datta, D. G. Schlom, J. A. Bain, and M. Skowronski, Nanotechnology 28, 405201 (2017)
"Growth and electronic properties of nanolines on TiO2-terminated SrTiO3 (001) surfaces", W. Yan, W. Sitaputra, M. Skowronski, and R. M. Feenstra, J. Appl. Phys. 122 (12), 124305 (201
"Electro-Thermal Model of Threshold Switching in TaOx‑Based Devices", J. M. Goodwill, A. A. Sharma, D. Li, J. A. Bain, and M. Skowronski, ACS Appl. Mater. Interfaces DOI: 10.1021/acsami.6b16559
"Joule heating-induced metal-insulator transition in epitaxial VO2/TiO2 devices", D. Li, A. A. Sharma, D. K. Gala, N. Shukla, H. Paik, S. Datta, D. G. Schlom, J. A.Bain and M. Skowronski, ACS Appl. Mater. & Interfaces 8, 12908 (2016)
"Transient thermometry and high resolution transmission electron microscopy analysis of filamentary resistive switches", J. Kwon, A. A. Sharma, C. Y. Chen, A. Fantini, M. Jurczak, A. A. Herzing, J. A. bain, Y. N. Picard, and M. Skowronski, ACS Appl. Mater. Interfaces 8, 20176 (2016)
"Low temperature electroformation of TaOx-based resistive switching devices", D. K. Gala, A. A. Sharma, D. S. Li, J. M. Goodwill, J. A. Bain, and M, Skowronski, Appl. Phys. Lett. Mater. 4, 016101 (2016)
"Low-power, high performance S-NDR oscillators for stereo (3D) vision using directly-coupled oscillator networks", A. A. Sharma, Y. Kesim, M. Shulaker, C. Kuo, C. Augustine, H. S. P. Wong, S. Mitra, M. Skowronski, J. A. Bain, and J. A. Weldon, 2016 IEEE Symp. VLSI Technol. (2016) DOI: 10.1109/VLSIT.2016.7573438
"Transient thermometry and HRTEM analysis of RRAM thermal dynamics during switching and failure", J. Kwon, A. A. Sharma, C. Y. Chen, A. Fantini, M. Jurczak, J. A. Bain, Y. N. Picard, and M. Skowronski, 2016 IEEE Int. Reliability Phys. Symp. (2016), DOI: 10.1109/IRPS.2016.7574579
"Oxygen vacancy creation, drift, and aggregation in TiO2-based resistive switches at low temperature and voltage", J. Kwon, A. A. Sharma, J. A. Bain, Y. N. Picard and M. Skowronski, Adv. Funct. Mater. 25, 2876 (2015)
"Thermometry of Filamentary RRAM Devices", E. Yalon, A. A. Sharma, M. Skowronski, J. A. Bain, D. Ritter, and I. V. Karpov, " IEEE Trans. Electron Dev. 62, 2972 (2015)
"High-Frequency TaOx-Based Compact Oscillators", A. A. Sharma, Y. Li, M. Skowronski, J. A. Bain, and J. A. Weldon, IEEE Trans. Electron Dev. 62, 3857 (2015)
"Dynamics of electroforming in binary metal oxide-based resistive switching memory", A. A. Sharma, I. V. Karpov, R. Kotlyar, J. Kwon, M. Skowronski, and J. A. Bain, J. Appl. Phys. 118, 114903 (2015)