Professor Marek Skowronski-Department of Materials Science and Engineering - Carnegie Mellon University

Professor Marek Skowronski

Professor of Materials Science and Engineering

Address:
Department of Materials Science and Engineering
Carnegie Mellon University
5000 Forbes Avenue
Pittsburgh, PA 15213-3890
Office: Roberts Engineering Hall 150
Phone: (412) 268-2710
Fax: (412) 268-7596

Bio

Professor Skowronski obtained his Ph.D. degree in Solid State Physics from Warsaw University (Warsaw, Poland) for work on transition metal ions in semiconductors. His post-doctoral appointment was in H. C. Gatos's Electronic Materials Group at Massachusetts Institute of Technology where he investigated native point defects in GaAs. In 1986, he joined Cabot Corporation (Billerica, MA) to work on crystal growth of III-V semiconductors. In 1988, he moved to Carnegie Mellon University. His research projects covers epitaxy of semiconductors and oxide films, electron microscopy of processing- and operation- induced defects, and processing of electronic devices.  Prof. Skowronski currently serves as Associate Editor of Journal of Crystal Growth. He has authored over 240 publications.

Education

Ph.D., Warsaw University

Research

We aim to discover, understand, and exploit novel materials and phenomena that will let us manipulate charge and spin of electrons, or phase of materials. The work is motivated by applications for high-performance dense storage class-memory, ultra-low power electronics for mobile devices, nano-scale phenomena in devices, and energy scavenging and conversion. The overarching driving force for the group's research is the energy efficient electronics.

The group's research interests stretch from:

(i) electronic materials: synthesis of thin films and hetero-structures; integration of 2D materials, such as graphene, and oxide templates; in situ electron microscopy of devices under bias.

(ii) nanoscale devices such as memristors, sensors, and magnetic tunnel junctions. Heterogeneous integration of CMOS circuits and novel technologies.

(iii) condensed matter physics (in situ surface science, band structure mapping, charge and spin transport at nanoscale). The sought after materials/characteristics include half-metals with fully spin polarized electrons, quantum spin Hall insulators, and materials with Dirac massless electrons.

Most projects are highly collaborative. Ongoing collaborations include Intel, Micron, IMEC, Arizona State University and University of Michigan.

Publications

"Electro-Thermal Model of Threshold Switching in TaOxBased Devices", J. M. Goodwill, A. A. Sharma, D. Li, J. A. Bain, and M. Skowronski, ACS Appl. Mater. Interfaces DOI: 10.1021/acsami.6b16559

"Joule heating-induced metal-insulator transition in epitaxial VO2/TiO2 devices", D. Li, A. A. Sharma, D. K. Gala, N. Shukla, H. Paik, S. Datta, D. G. Schlom, J. A.Bain and M. Skowronski, ACS Appl. Mater. & Interfaces 8, 12908 (2016)

"Transient thermometry and high resolution transmission electron microscopy analysis of filamentary resistive switches", J. Kwon, A. A. Sharma, C. Y. Chen, A. Fantini, M. Jurczak, A. A. Herzing, J. A. bain, Y. N. Picard, and M. Skowronski, ACS Appl. Mater. Interfaces 8, 20176 (2016)

"Low temperature electroformation of TaOx-based resistive switching devices", D. K. Gala, A. A. Sharma, D. S. Li, J. M. Goodwill, J. A. Bain, and M, Skowronski, Appl. Phys. Lett. Mater. 4, 016101 (2016)

"Low-power, high performance S-NDR oscillators for stereo (3D) vision using directly-coupled oscillator networks", A. A. Sharma, Y. Kesim, M. Shulaker, C. Kuo, C. Augustine, H. S. P. Wong, S. Mitra, M. Skowronski, J. A. Bain, and J. A. Weldon, 2016 IEEE Symp. VLSI Technol. (2016) DOI: 10.1109/VLSIT.2016.7573438

"Transient thermometry and HRTEM analysis of RRAM thermal dynamics during switching and failure", J. Kwon, A. A. Sharma, C. Y. Chen, A. Fantini, M. Jurczak, J. A. Bain, Y. N. Picard, and M. Skowronski, 2016 IEEE Int. Reliability Phys. Symp. (2016), DOI: 10.1109/IRPS.2016.7574579

"Oxygen vacancy creation, drift, and aggregation in TiO2-based resistive switches at low temperature and voltage", J. Kwon, A. A. Sharma, J. A. Bain, Y. N. Picard and M. Skowronski, Adv. Funct. Mater. 25, 2876 (2015)

"Thermometry of Filamentary RRAM Devices", E. Yalon, A. A. Sharma, M. Skowronski, J. A. Bain, D. Ritter, and I. V. Karpov, " IEEE Trans. Electron Dev. 62, 2972 (2015)

"High-Frequency TaOx-Based Compact Oscillators", A. A. Sharma, Y. Li, M. Skowronski, J. A. Bain, and J. A. Weldon, IEEE Trans. Electron Dev. 62, 3857 (2015)

"Dynamics of electroforming in binary metal oxide-based resistive switching memory", A. A. Sharma, I. V. Karpov, R. Kotlyar, J. Kwon, M. Skowronski, and J. A. Bain, J. Appl. Phys.  118, 114903 (2015)

Skowronski's publications using Google Scholar

Skowronski's publications using Thomson Reuters ResearcherID