Paper Accepted to DATE 2026 on 3D IC Thermal Solutions
Our paper, “3D IC Thermal Management with BEOL Wafer-Scale Sputtered Vertical h-BN,” has been accepted to the Design, Automation, and Test in Europe (DATE) Conference 2026. The work demonstrates a wafer-scale approach for integrating hexagonal boron nitride (h-BN) as a thermally conductive dielectric in advanced 3D integrated circuits. Using a back-end-of-line-compatible sputtering process, we show how vertically oriented h-BN films can enhance heat dissipation and enable higher stacking density in monolithic 3D systems. Full results will be presented at DATE 2026