Published in J. Vac. Sci. Technol. B 21, 18 (2003).

Scanning Tunneling Microscopy Images of III-V Semiconductor Alloys: Strain Effects

H. A. McKay (a), Huajie Chen (a), R. M. Feenstra (a), and P.J. Poole (b)
(a)Department of Physics, Carnegie Mellon University, Pittsburgh, PA 15213
(b)Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, K1A0R6, Canada


Scanning tunneling microscope images of lattice-matched InGaAs/InP structures were investigated using autocorrelation analysis. Correlation lengths and correlation amplitudes were calculated from constant-current empty-state images. Theoretical STM images were calculated from a model which only considered surface displacements due to strain relaxation. By comparing model and experimental correlation lengths and amplitudes it is concluded that contrast variations in constant-current images are dominated by strain relaxation effects. Changes in probe tip geometry and applications of this technique to study clustering in III-V alloys are also discussed.

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