Carnegie Mellon University

Lisa M. Porter

Lisa M. Porter

Professor of Materials Science and Engineering

  • Roberts Engineering Hall 145
  • 412-268-4047
Department of Materials Science and Engineering
Carnegie Mellon University
364 Hamerschlag Drive
Pittsburgh, PA 15213-3890


Research Area: Inorganic Functional Materials

Lisa Porter received Ph.D. and B.S. degrees in Materials Science & Engineering from N.C. State University and Cornell University, respectively. Her research pertains to fabrication, processing, and characterization of electronic materials, with recent focus on gallium oxide as a promising new wide bandgap semiconductor. In addition to her research, she holds leadership positions in a number of professional organizations and is heavily involved in professional service. She was the 2018 President of the American Vacuum Society (AVS), an international society pertaining to the Science & Technology of Materials, Interfaces, and Processing. She recently served as the Program Chair for the AVS 63rd International Symposium and is Program Chair of the Electronic Materials Conference.  She is also an ABET Program Evaluator for materials engineering programs. Her awards include the Philbrook Prize in Engineering from CMU (2012), “Women Driving the Material World” Award from the Women & Girls Foundation (2006), a National Science Foundation Career Award (1999-2004), National Swedish Foundation Visiting Professorship (2000-2002) and she is a member of the NC State MSE Alumni Hall of Fame (2018).


Ph.D., North Carolina State University; B.S., Cornell University


Professor Porter's research activities are focused on wide bandgap semiconductor materials, interfaces and devices. Her group investigates growth and processing of materials and device structures and characterizes their chemical, microstructural, optical and electrical properties to understand and optimize device performance. Current projects concentrate on epitaxial growth, contacts, and processing of gallium oxide (Ga2O3)-based device structures for ultra-high efficiency electronics.  Applications of the research are geared toward advanced electronic materials for future energy applications, semiconductor materials and devices for extreme environments, high efficiency electronics, and nanotechnology.


L.A.M. Lyle, K. Jiang, E.V. Favela, K. Das, A. Popp, Z. Galazka, G. Wagner, and L.M. Porter, “Effect of metal contacts on (100) b-Ga2O3 Schottky barriers,” J. Vac. Sci. Technol. A (2021).

L.M. Porter and J.R. Hajzus, “Perspectives from research on metal-semiconductor contacts: examples from Ga2O3, SiC (nano)diamond, and SnS,” J. Vac. Sci. Technol. A 38, 031005 (2020).

L.A.M. Lyle, S. Okur, J. Letton, V.S.N. Chava, M.L. Kelley, R.F. Davis, G.S. Tompa, MVS Chandrashekhar, A.B. Greytak, and L.M. Porter, “Characterization of epitaxial β-(Al,Ga,In)2O3-based films and applications as UV photodetectors,” J. Electron. Mater., (2020).

J.R. Hajzus and L.M. Porter, “Characterization of electron-beam deposited SnS films: processing, properties, and ohmic contacts,” J. Vac. Sci. Technol. A 37, (2019) 061504. 

K. Jiang, L.A.M. Lyle, E.V. Favela, D. Moody, T. Lin, K.K. Das, A. Popp, Z. Galazka, G. Wagner, and L.M. Porter, “Electrical properties of (100) β-Ga2O3 Schottky diodes with four different metals,” ECS Transactions, 92 (7), 71-78 (2019).

L.A.M. Lyle, L. Jiang, K.K. Das, and L.M. Porter, “Schottky Contacts to β-Ga2O3,” in Gallium Oxide – Technology, Devices and Applications, S.J. Pearton, F. Ren, and M. Mastro, Eds. (Elsevier Inc., 2019) pp. 231-262.

Y. Yao, S. Okur, L.A.M. Lyle, G.S. Tompa, T. Salagaj, N. Sbrockey, R.F. Davis, and L.M. Porter, “Growth and characterization of α-, β-, and ε-phases of Ga2O3 using MOCVD and HVPE techniques,” Mater. Res. Lett. 6(5), 268-275 (2018).

J.R. Hajzus, A.J. Biacchi, S.T. Le, C.A. Richter, A.R. Hight Walker, and L.M. Porter, “Contacts to solution-synthesized SnS nanoribbons: Dependence of barrier height on metal work function,” Nanoscale 10, 319-327 (2018).

Y. Yao, L.A.M. Lyle, J.A. Rokholt, S. Okur, G.S. Tompa, T. Salagaj, N. Sbrockey, R.F. Davis, and L.M. Porter, “Growth and characterization of α-, β-, and ε-Ga2O3 epitaxial layers on sapphire,” ECS Transactions, 80(7), 191-196 (2017).

S. Okur, G.S. Tompa, N. Sbrockey, T. Salagaj, V. Blank, B. Henninger, M. Baldini, G. Wagner, Z. Galazka, Y. Yao, J. Rokholt, R.F. Davis, L.M. Porter, and A. Belkind, “Growth of Ga2O3 for Power Device Production,” Vacuum Technology & Coating, pp. 31-39, May 2017.

Y. Yao, R. Gangireddy, J. Kim, K. Das, R.F. Davis, and L.M. Porter, “Electrical behavior of β-Ga2O3 Schottky diodes with different Schottky metals,” J. Vac. Sci. Technol. B 35(3), 03D113.1-7 (2017).

Y. Yao, R.F. Davis, and L.M. Porter, “Investigation of Different Metals as Ohmic Contacts to β-Ga2O3: Comparison and Analysis of Electrical Behavior, Morphology, and Other Physical Properties,” J. Electron. Mater. (2016).

F. Liu, L. Huang, L.M. Porter, R.F. Davis, and D.K. Schreiber, “Analysis of Compositional Uniformity in AlxGa1-xN Thin Films Using Atom Probe Tomography and Electron Microscopy,” J. Vac. Sci. Technol. A 34(4), 041510.1-8 (2016).

E. Chagarov, L.M. Porter, and A.C. Kummel, “Density-Functional Theory Molecular Dynamics Simulations of a-HfO2/Ge(100)(2x1) and a-ZrO2/Ge(100)(2x1) Interface Passivation, J. Chem. Phys., 144, 084704.1-10 (2016).

S. Narayanan, J.R. Hajzus, C.E. Treacy, M.R. Bockstaller, and L.M. Porter, “Polymer embedded silver-nanowire network structures – A platform for the facile fabrication of flexible transparent conductors,” ECS Journal of Solid State Science and Technology 3(11), P363-P369 (2014).

F. Liu, L. Huang, R.F. Davis, L.M. Porter, D.K. Schreiber, E.A. Preble, T. Paskova, and K.R. Evans, “Composition and interface analysis of InGaN/GaN Multi-Quantum-Wells on GaN Substrates Using Atom Probe Tomography,” J. Vac. Sci. Technol. B 32(5), 051209.1-7 (2014).

F. Liu, L. Huang, R. Kamaladasa, Y. Picard, E.A. Preble, T. Paskova, K. Evans, R.F. Davis, and L.M. Porter, “Site-Specific Comparisons of V-defects and Threading Dislocations in InGaN/GaN Multi-Quantum-Wells Grown on SiC and GaN Substrates,” J. Cryst. Growth, 387, 16-22 (2014).