Carnegie Mellon University

Lisa M. Porter

Lisa M. Porter

Professor of Materials Science and Engineering

  • Roberts Engineering Hall 145
  • 412-268-4047
Department of Materials Science and Engineering
Carnegie Mellon University
5000 Forbes Avenue
Pittsburgh, PA 15213-3890


Lisa Porter received Ph.D. and B.S. degrees in Materials Science & Engineering from N.C. State University and Cornell University, respectively. She serves as a research and academic advisor to both graduate and undergraduate students and is actively involved in several outreach activities and societies. She is President-Elect of the American Vacuum Society (AVS), an international society pertaining to the Science & Technology of Materials, Interfaces, and Processing. She recently served as the Program Chair for the AVS 63rd International Symposium. Her awards include the Philbrook Prize in Engineering from CMU (2012), “Women Driving the Material World” Award from the Women & Girls Foundation (2006), a National Science Foundation Career Award (1999-2004) and a National Swedish Foundation Visiting Professorship (2000-2002).


Ph.D., North Carolina State University; B.S., Cornell University


Professor Porter's research activities are focused on wide bandgap semiconductor materials, interfaces and devices. Her group investigates growth and processing of materials and device structures and characterizes their chemical, microstructural, optical and electrical properties to understand and optimize device performance. Current projects concentrate on epitaxial growth, contacts, and processing of gallium oxide (Ga2O3)-based device structures for ultra-high efficiency electronics and electrical contacts to 2D semiconductors.  Applications of the research are geared toward advanced electronic materials for future energy applications, semiconductor materials and devices for extreme environments, high efficiency electronics, and nanotechnology.


Y. Yao, R.F. Davis, and L.M. Porter, “Investigation of Different Metals as Ohmic Contacts to b-Ga2O3: Comparison and Analysis of Electrical Behavior, Morphology, and Other Physical Properties,” J. Electron. Mater. (2016). DOI: 10.1007/s11664-016-5121-1

F. Liu, L. Huang, L.M. Porter, R.F. Davis, and D.K. Schreiber, “Analysis of Compositional Uniformity in AlxGa1-xN Thin Films Using Atom Probe Tomography and Electron Microscopy,” J. Vac. Sci. Technol. A 34(4), 041510.1-8 (2016).

E. Chagarov, L.M. Porter, and A.C. Kummel, “Density-Functional Theory Molecular Dynamics Simulations of a-HfO2/Ge(100)(2x1) and a-ZrO2/Ge(100)(2x1) Interface Passivation, J. Chem. Phys., 144, 084704.1-10 (2016).

S. Narayanan, J.R. Hajzus, C.E. Treacy, M.R. Bockstaller, and L.M. Porter, “Polymer embedded silver-nanowire network structures – A platform for the facile fabrication of flexible transparent conductors,” ECS Journal of Solid State Science and Technology 3(11), P363-P369 (2014). DOI: 10.1149/2.0131411jss

F. Liu, L. Huang, R.F. Davis, L.M. Porter, D.K. Schreiber, E.A. Preble, T. Paskova, and K.R. Evans, “Composition and interface analysis of InGaN/GaN Multi-Quantum-Wells on GaN Substrates Using Atom Probe Tomography,” J. Vac. Sci. Technol. B 32(5), 051209.1-7 (2014).

F. Liu, L. Huang, R. Kamaladasa, Y. Picard, E.A. Preble, T. Paskova, K. Evans, R.F. Davis, and L.M. Porter, “Site-Specific Comparisons of V-defects and Threading Dislocations in InGaN/GaN Multi-Quantum-Wells Grown on SiC and GaN Substrates,” J. Cryst. Growth, 387, 16-22 (2014).

J.H. Melby, R.F. Davis, and L.M. Porter, “Modeling the electrical response of hydrogen sensors based on AlGaN/GaN high-electron-mobility transistors,” ECS Journal of Solid State Science and Technology 2 (11) Q214-Q219 (2013). DOI: 10.1149/2.031311jss

S. Narayanan, J. Choi, L.M. Porter, and M.R. Bockstaller, “Flexible Transparent Metal/Polymer Composite Materials Based on Optical Resonant Laminate Structures,” ACS Applied Materials and Interfaces, 5 (10), 4093-4099 (2013).

P. Kerber, L.M. Porter, L.A. McCullough, T. Kowalewski, M. Engelhard, and D. Baer, “Study of Surface Cleaning Methods and Pyrolysis Temperatures on Nano-structured Carbon Films Using X–ray Photoelectron Spectroscopy,” J. Vac. Sci. Technol. A. 30(6), 061407.1-6 (2012).

Z. Su, L. Huang, F. Liu, L.M. Porter, R.F. Davis, and J.A. Malen, “Layer-by-layer Thermal Conductivities of the Group III Nitride Films in Blue/Green Light-Emitting Diodes,” Appl. Phys. Lett. 100, 201106 (2012).