Published in Appl. Phys. Lett. 72, 1727 (1998).

Strain variations in InGaAsP/InGaP superlattices studied by scanning probe microscopy

Huajie Chen and R. M. Feenstra
Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213
R. S. Goldman
Department of Materials Science and Engineering, The University of Michigan, Ann Arbor, Michigan 48109
C. Silfvenius and G. Landgren
Department of Electronics, Royal Institute of Technology, Kista, Sweden


Strain-compensated InGaAsP/InGaP superlattices are studied in cross-section by atomic force microscopy (AFM) and scanning tunneling microscopy (STM). Undulations in the morphology of the (110) cross-sectional faces are observed, and are attributed to elastic relaxation of this surface due to underlying strain arising from thickness and compositional variations of the superlattice layers. Finite element computations are used to extract a quantitative measure of the strain variation.

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