Published in Appl. Phys. Lett. 90, 253507 (2007).
Field effect in epitaxial graphene on a silicon carbide substrate
Gong Gu (a), Shu Nie (b), R. M. Feenstra (b), R. P. Devaty (c), W. J. Choyke (c), Winston K. Chan (a) and Michael G. Kane (a)
(a) Sarnoff Corporation, CN5300, Princeton, New Jersey 08543
(b) Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213
(c) Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260
We report the observation of a strong field effect in epitaxially synthesized, as opposed to exfoliated, graphene at room temperature. The graphene formed on the silicon face of a 4H silicon carbide substrate was photolithographically patterned into isolated active regions for the semimetal graphene-based transistors. Gold electrodes and a polymer dielectric were used to complete the transistor structure. The successful demonstration of a field effect mobility of 535 cm2/Vs was attributed to the transistor geometry that maximizes conductance modulation, although the mobility is lower than observed in exfoliated graphene possibly due to current interruption caused by the rough morphology of the substrate surface.
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