Proceedings ICSCRM 2005, published in Mat. Sci. Forum 527-529, 1023 (2006).
Scanning Tunneling Spectroscopy of Oxidized 6H-SiC Surfaces
S. Nie and R. M. Feenstra
Dept. Physics, Carnegie Mellon University, Pittsburgh, PA 15213
Scanning tunneling microscopy and spectroscopy has been used to study the
electronic states of oxidized 6H-SiC interfaces. The SiC surfaces were oxidized by
annealing in an ultra-high vacuum chamber at 600-800ºC under 1×10-7 Torr pressure
of molecular oxygen. Tunneling spectra revealed two dominant states at –1.8 and 1.5 eV
relative to the Fermi level, which lie outside the band gap region but are
inhomogeneously broadened such that they extend into the gap, together with additional
features within the band gap.
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