Published in Mat. Res. Soc. Symp. Proc. Vol. 798, Y9.6.1 (2004).

Combined MOCVD and MBE growth of GaN on porous SiC

Ashutosh Sagar (a), R. M. Feenstra (a), C. K. Inoki (b), T. S. Kuan (b), and D. D. Koleske (c)
(a) Department of Physics, Carnegie Mellon University, Pittsburgh, PA 15213
(b) Department of Physics, University at Albany, SUNY, Albany, NY 12222
(c) Chemical Processing Science Department, Sandia National Laboratories, Albuquerque, NM 87185


GaN films have been grown homoepitaxially by MOCVD on MBE-grown GaN template layers, using both porous and nonporous SiC substrates. The effect of the porous SiC substrates on dislocations in the MBE and MOCVD GaN layers has been studied using TEM and x-ray characterization. A reduction in dislocation density from >1x1010 cm-2 in the MBE template to 2.5x109 cm-2 at the top of the MOCVD film is found, with similar final values in the MOCVD films for both porous and nonporous substrates. We discuss various mechanisms by which dislocation density is reduced in the MOCVD layers.

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