Published in Surf. Sci. 547, 127 (2003).
Low Energy Electron Microscopy of Indium on Si(001) Surfaces
H. A. McKay and R. M. Feenstra
Department of Physics, Carnegie Mellon University, Pittsburgh, PA 15213
Low energy electron microscopy is used to study the behavior of thin
indium films on Si(001) surfaces from 100 C up to 700 C.
For temperatures below 150 C we see inversions in the LEEM
dark-field image and LEED 1/2-order spot intensities as indium
coverage increases from 0 to 2 ML. For temperatures between
150 C and 600 C we find the formation of a disordered and an ordered
(4x3) phase on the surface. For temperatures above 500 C
we observe significant rearrangement of the Si(001) surface due to the
presence of indium and etching of the Si(001) surface by indium at
temperatures greater than 650 C.
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