Published in Mater. Res. Soc. Symp. Proc. 743, L4.1.1 (2003).

Morphology and surface reconstructions of m-plane GaN

C. D. Lee (a), R. M. Feenstra (a), J. E. Northrup (b), L. Lymperakis (c), and J. Neugebauer (c)
(a) Department of Physics, Carnegie Mellon University, Pittsburgh, PA 15213
(b) Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304
(c) Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, D-14195 Berlin, Germany


M-plane GaN(1 -1 0 0) is grown by plasma assisted molecular beam epitaxy on ZnO(1 -1 0 0) substrates. A low-temperature GaN buffer layer is found to be necessary to obtain good structural quality of the films. Well oriented (1 -1 0 0) GaN films are obtained, with a slate like surface morphology. On the GaN(1 -1 0 0) surfaces, reconstructions with symmetry of c(2x2) and approximate "4x5" and are found under N- and Ga-rich conditions, respectively. We propose a model for Ga-rich conditions with the "4x5" structure consisting of monolayers of Ga terminating the GaN surface.

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