Published in J. Cryst. Growth 249, 437 (2003).
Cross-Sectional Scanning Tunneling Microscopy Studies of
Lattice-Matched InGaAs/InP Quantum Wells: Variations in Growth
Switching Sequence
H. A. McKay (a), Huajie Chen (a), R. M. Feenstra (a), P.J. Poole (b) and G. C. Aers (b)
(a)Department of Physics, Carnegie Mellon University, Pittsburgh, PA 15213
(b)Institute for Microstructural Sciences, National Research Council
of Canada, Ottawa, K1A0R6, Canada
Abstract
Cross-sectional scanning tunneling microscopy (XSTM) has been used to study
variations in the source gas switching sequences in lattice-matched
InGaAs/InP heterostructures grown by chemical beam epitaxy. Using finite
element analysis, changes in
well-barrier interface strain can be understood in terms of As/P
exchange and As memory effect in the growth chamber. Results from
annealed samples indicate a greater interdiffusion of group-V species
than group-III species.
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