Published in J. Cryst. Growth 249, 437 (2003).

Cross-Sectional Scanning Tunneling Microscopy Studies of Lattice-Matched InGaAs/InP Quantum Wells: Variations in Growth Switching Sequence

H. A. McKay (a), Huajie Chen (a), R. M. Feenstra (a), P.J. Poole (b) and G. C. Aers (b)
(a)Department of Physics, Carnegie Mellon University, Pittsburgh, PA 15213
(b)Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, K1A0R6, Canada


Cross-sectional scanning tunneling microscopy (XSTM) has been used to study variations in the source gas switching sequences in lattice-matched InGaAs/InP heterostructures grown by chemical beam epitaxy. Using finite element analysis, changes in well-barrier interface strain can be understood in terms of As/P exchange and As memory effect in the growth chamber. Results from annealed samples indicate a greater interdiffusion of group-V species than group-III species.

Click here for preprint of paper, in pdf format

Return to Home Page of Feenstra group