Published in Phys. Rev. B 66, 165204 (2002).

Low-temperature scanning tunneling spectroscopy of n-type GaAs(110) surfaces

R. M. Feenstra (a), G. Meyer (b), F. Moresco (c) and K. H. Rieder (c)
(a)Department of Physics, Carnegie Mellon University, Pittsburgh, PA 15213
(b)Paul Drude Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany
(c)Institut fuer Experimentalphysik, Freie Universitaet Berlin, Arnimallee 14, 14195 Berlin, Germany


Scanning tunneling spectroscopy is used to study n-type GaAs(110) surfaces at temperatures near 10 K. Spectral lines associated with surface accumulation layer states are observed. Near dopant atoms, three additional lines are seen in the spectra. These lines are identified with the donor states near the conduction band minimum (seen at different voltages for tunneling into and out of the states) and with a donorlike state derived from the accumulation layer.

Click here for preprint of paper, in pdf format

Return to Home Page of Feenstra group