Published in J. Appl. Phys. 92, 4070 (2002).

Morphology and Effects of Hydrogen Etchings of Porous SiC

Ashutosh Sagar (a), C. D. Lee (a), R. M. Feenstra (a), C. K. Inoki (b), and T. S. Kuan (b)
(a)Department of Physics, Carnegie Mellon University, Pittsburgh, PA 15213
(b)Department of Physics, University at Albany, SUNY, Albany, NY 12222


The morphology of the porous network in porous SiC has been studied. It has been found that pore formation starts with a few pores on the surface and then the porous network grows in a V-shaped branched structure below the surface. The hydrogen etching rates of porous and nonporous SiC have been measured. Etch rates of porous and nonporous wafers of various miscuts are found to be equal within a factor of two, indicating that the rate-limiting step in the etching process arises from the supply of active etching species from the gas phase. The porous SiC etches slightly faster than the nonporous SiC, which is interpreted simply in terms of the reduced average density of the porous material.

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