Published in MRS Internet J. Nitride Semi
cond. Res. 7, 2 (2001).
(This paper was presented at GaN Symposium of the MRS Fall 2001 Meeting, and an
abbreviated version of the paper will be published in the MRS Proceedings for that Symposium).
Structural Properties of GaN Films Grown by Molecular Beam Epitaxy on Singular and Vicinal 6H-SiC(0001)
C. D. Lee (a), R. M. Feenstra (a), O. Shigiltchoff (b), R. P. Devaty (b) and W. J. Choyke (b)
(a)Department of Physics, Carnegie Mellon University, Pittsburgh, PA 15213
(b)Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260
Gallium nitride films are grown by plasma-assisted molecular beam
epitaxy (MBE) on 6H-SiC(0001) substrates with no miscut and with 3.5
degree miscuts in both the [1 -1 0 0] and [1 1 -2 0] directions.
The hydrogen-etched substrates display straight or chevron shaped steps,
respectively, and the same morphology is observed on the GaN films.
X-ray rocking curves display substantially reduced width for films on
the vicinal substrates compared to singular substrates, for the same
Ga/N flux ratio used during growth.
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