Published in Phys. Stat. Sol. (a) 188, 595 (2001).
Growth of GaN on SiC(0001) by Molecular Beam Epitaxy
C. D. LEE (a), ASHUTOSH SAGAR (a), R. M. FEENSTRA (a), W. L. SARNEY (b), L. SALAMANCA-RIBA (b), and J. W. P. HSU (c)
(a) Department of Physics, Carnegie Mellon University, Pittsburgh, PA 15213, USA
(b) Materials and Nuclear Engineering Department, University of Maryland, College Park, MD 20742-2115, USA
GaN films are grown by plasma-assisted molecular beam epitaxy on 6H-SiC(0001) substrates.
Suitable substrate preparation and growth conditions are found which greatly improve
the structural quality of the films. Threading dislocation densities of about
1x109 cm-2 for edge dislocations and 1x107 cm-2
for screw dislocations are achieved in GaN films of 1 micrometer thickness grown under optimal
conditions. Reverse leakage is observed near some dislocations, although the majority of
dislocations do not produce leakage.
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