Published in MRS Internet J. Nitride Semicond. Res. 6, 11 (2001).
(This paper was presented at GaN Symposium of the MRS Fall 2000 Meeting, and an abbreviated version of the paper has been published in the MRS Proceedings for that Symposium).

Indium incorporation and surface segregation during InGaN growth by molecular beam epitaxy: experiment and theory

Huajie Chen,* R. M. Feenstra,* J. E. Northrup,** T. Zywietz,*** J. Neugebauer,*** and D. W. Greve****
*Department of Physics, Carnegie Mellon University, Pittsburgh, PA 15213
**Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
***Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, D-14195 Berlin, Germany
****Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA 15213


InGaN alloys with (0001) or (000-1) polarities are grown by plasma-assisted molecular beam epitaxy. Scanning tunneling microscopy images, interpreted using first-principles theoretical computations, show that there is a strong indium surface segregation on InGaN for both (0001) and (000-1) polarities. Evidence for the existence and stability of a structure containing two adlayers of indium on the In-rich InGaN(0001) surface is reported. The dependence on growth temperature and group III/V ratio of indium incorporation in InGaN is reported, and a quantitative model based on indium surface segregation is proposed to explain the observed incorporation.

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