Published in Appl. Phys. Lett. 78, 82 (2001).

Arrangement of Nitrogen Atoms in GaAsN Alloys determined by Scanning Tunneling Microscopy

H. A. McKay*, R. M. Feenstra*, T. Schmidtling** and U. W. Pohl**
*Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213
**Technische Universitaet Berlin, Hardenbergstr. 36, D-10623 Berlin, Germany


The pair distribution function of nitrogen atoms in GaAs0.983N0.017 has been determined by scanning tunneling microscopy. Nitrogen atoms in the first and third planes relative to the cleaved (1 -1 0) surface are imaged. A modest enhancement in the number of nearest-neighbor pairs particularly with [001] orientation is found, although at larger separations the distribution of N pair separations is found to be random.

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