Published in Appl. Phys. Lett. 78, 82 (2001).
Arrangement of Nitrogen Atoms in GaAsN Alloys
determined by Scanning Tunneling Microscopy
H. A. McKay*, R. M. Feenstra*, T. Schmidtling** and U. W. Pohl**
*Department of Physics, Carnegie Mellon University,
Pittsburgh, Pennsylvania 15213
**Technische Universitaet Berlin,
Hardenbergstr. 36, D-10623 Berlin, Germany
The pair distribution function of nitrogen atoms in
GaAs0.983N0.017 has been determined by
microscopy. Nitrogen atoms in the first and third planes relative to
the cleaved (1 -1 0) surface are imaged. A modest enhancement in
the number of nearest-neighbor pairs particularly with 
orientation is found, although at larger separations the distribution
of N pair separations is found to be random.
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