Published in Surf. Sci. Review and Letters 7, 601 (2000).

Surface Morphology of GaN Surfaces during Molecular Beam Epitaxy

R. M. Feenstra,* Huajie Chen,* V. Ramachandran,* C. D. Lee,* A. R. Smith,** J. E. Northrup,*** T. Zywietz,**** J. Neugebauer**** and D. W. Greve*****
*Department of Physics, Carnegie Mellon University, Pittsburgh, PA 15213
**Department of Physics and Astronomy, Ohio University, Athens, Ohio 45701
***Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
****Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, D-14195 Berlin, Germany
*****Department Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA 15213


The reconstruction and surface morphology of gallium nitride (0001) and (000-1) surfaces are studied using scanning probe microscopy and reflection high-energy electron diffraction. Results for bare GaN surfaces are summarized, and changes in the surface structure and morphology due to co-deposition of indium or magnesium during growth are discussed.

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