Proceedings of International Conf. on Defects in Semiconductors, Physica B 273-274, 796 (1999).

Comparison of Electronic and Mechanical Contrast in Scanning Tunneling Microscopy Images of Semiconductor Heterojunctions

R. M. Feenstra
Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213


The use of cross-sectional scanning tunneling microscopy (STM) to study strain in semiconductor heterostructures is discussed. In particular, intermixing between constituent heterostructure layers leads to internal strains in the heterostructure, and these strained regions are evident by displacement of the cleavage surface formed in the STM study. A theoretical analysis is made of the magnitude of electronic compared to mechanical contributions to the contrast of STM images, from which it is found that the former are relatively small, on the order of 0.1 angstrom, for typical InxGa1-xAsyP1-y heterostructures

Click here for preprint of paper, in pdf format.

Return to Home Page of Feenstra group