Published in Appl. Surf. Sci. 166, 165 (2000).
Reconstructions of GaN and InGaN Surfaces
R. M. Feenstra, Huajie Chen, and V. Ramachandran
Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania
A. R. Smith
Department of Physics and Astronomy,
Ohio University, Athens, Ohio 45701
D. W. Greve
Department of Electrical and Computer Engineering, Carnegie
Pittsburgh, Pennsylvania 15213
The reconstruction and growth kinetics of gallium nitride (0001) and
(000-1) surfaces are studied using scanning tunneling
microscopy, reflection high-energy electron diffraction, and
low-energy electron diffraction. Results for bare GaN surfaces are
summarized, with particular attention paid to the
``pseudo-1x1'' reconstruction of the (0001) face. Changes in
the surface structure and kinetic processes due to indium
co-deposition during growth are discussed.
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