Published in Appl. Surf. Sci. 166, 165 (2000).

Reconstructions of GaN and InGaN Surfaces

R. M. Feenstra, Huajie Chen, and V. Ramachandran
Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213
A. R. Smith
Department of Physics and Astronomy, Ohio University, Athens, Ohio 45701
D. W. Greve
Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213


The reconstruction and growth kinetics of gallium nitride (0001) and (000-1) surfaces are studied using scanning tunneling microscopy, reflection high-energy electron diffraction, and low-energy electron diffraction. Results for bare GaN surfaces are summarized, with particular attention paid to the ``pseudo-1x1'' reconstruction of the (0001) face. Changes in the surface structure and kinetic processes due to indium co-deposition during growth are discussed.

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