Published in Phys. Rev. B 60, 4478 (1999).

Tunneling spectroscopy of the Si(111)2x1 surface

R. M. Feenstra
Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213


Scanning tunneling spectroscopy has been used to observe electronic band features of the Si(111)2x1 surface, focusing on the size of the surface-state band gap. It is shown that peak positions in the normalized conductance, (dI/dV)/(I/V), which are used to characterize the tunneling spectrum, are shifted slightly towards zero volts compared to the corresponding band structure features. A corrected band gap of 0.59 +/- 0.04 eV is obtained for this surface.

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