Published in Phys. Rev. B 60, 4478 (1999).
Tunneling spectroscopy of the Si(111)2x1 surface
R. M. Feenstra
Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania
Scanning tunneling spectroscopy has been used to observe electronic
band features of the Si(111)2x1 surface, focusing on the size
of the surface-state band gap. It is shown that peak positions in
the normalized conductance, (dI/dV)/(I/V), which are used to
characterize the tunneling spectrum, are shifted slightly towards zero
volts compared to the corresponding band structure features. A
corrected band gap of 0.59 +/- 0.04 eV is obtained for this surface.
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