Published in Appl. Phys. Lett. 75, 79 (1999).

Enhanced group V intermixing in InGaAs/InP quantum wells studied by cross-sectional scanning tunneling microscopy

Huajie Chen and R.M. Feenstra
Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213
P.G. Piva, R.D. Goldberg and I.V. Mitchell
Department of Physics and Astronomy, University of Western Ontario, London, Canada N6A3K7
G.C.Aers, P.J. Poole and S. Charbonneau
Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Canada K1A0R6


Cross-sectional scanning tunneling microscopy is used to study InGaAs/InP quantum well intermixing produced by phosphorus implantation. When phosphorus ions are implanted in a cap layer in front of the quantum wells (in contrast to earlier work involving implantation through the wells), clear strain development is observed at the interfaces between quantum well and barrier layers after annealing. This is interpreted in terms of enhanced group V compared to group III interdiffusion.

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