Published in Appl. Phys. Lett. 75, 79 (1999).
Enhanced group V intermixing in InGaAs/InP quantum wells
studied by cross-sectional scanning tunneling microscopy
Huajie Chen and R.M. Feenstra
Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania
P.G. Piva, R.D. Goldberg and I.V. Mitchell
Department of Physics and Astronomy, University of Western Ontario,
London, Canada N6A3K7
G.C.Aers, P.J. Poole and S. Charbonneau
Institute for Microstructural Sciences,
National Research Council of Canada, Ottawa, Canada K1A0R6
Cross-sectional scanning tunneling microscopy is used to study
InGaAs/InP quantum well intermixing produced by phosphorus
implantation. When phosphorus ions are implanted in a cap layer in
front of the quantum wells (in contrast to earlier work involving
implantation through the wells), clear strain development is observed
at the interfaces between quantum well and barrier layers after
annealing. This is interpreted in terms of enhanced group V compared
to group III interdiffusion.
Click here for preprint of paper, in pdf format.
Return to Home Page of Feenstra group