Published in Appl. Phys. Lett. 74, 1439 (1999).

Scanning tunneling microscopy and spectroscopy of arsenic antisites in low temperature grown InGaAs

B. Grandidier, Huajie Chen, R. M. Feenstra
Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213
D. T. McInturff
School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907
P. W. Juodawlkis and S. E. Ralph
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30322-0250


Scanning tunneling microscopy is used to study low temperature grown (LTG) InGaAs, with and without Be doping. The Be-doped material is observed to contain significantly fewer AsGa antisite defects than the undoped material, with no evidence found for Be-As complexes. Annealing of the LTG-InGaAs forms precipitates preferentially in the undoped material. The previously observed dependence of the optical response time on Be-doping and annealing is attributed to changes in the As antisite concentration and the compensation effect of the Be.

Click here for preprint of paper, in pdf format.

Return to Home Page of Feenstra group