Published in Appl. Phys. Lett. 74, 1439 (1999).
Scanning tunneling microscopy and spectroscopy of arsenic antisites
in low temperature grown InGaAs
B. Grandidier, Huajie Chen, R. M. Feenstra
Department of Physics,
Carnegie Mellon University, Pittsburgh, Pennsylvania 15213
D. T. McInturff
School of Electrical and Computer Engineering, Purdue University,
West Lafayette, Indiana 47907
P. W. Juodawlkis and S. E. Ralph
School of Electrical and Computer Engineering, Georgia Institute of
Technology, Atlanta, Georgia 30322-0250
Scanning tunneling microscopy is used to study low temperature grown
(LTG) InGaAs, with and without Be doping. The Be-doped material is
observed to contain significantly fewer AsGa antisite defects than
the undoped material, with no evidence found for Be-As complexes.
Annealing of the LTG-InGaAs forms precipitates preferentially in the
undoped material. The previously observed dependence of the optical
response time on Be-doping and annealing is attributed to changes in
the As antisite concentration and the compensation effect of the Be.
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