Published in Phys. Rev. Lett. 82, 1000 (1999).

Scanning Tunneling Spectroscopy of Mott-Hubbard states on the 6H-SiC(0001) root(3) x root(3) Surface

V. Ramachandran and R. M. Feenstra
Department of Physics, Carnegie Mellon University, Pittsburgh, PA 15213


Scanning tunneling spectra have been measured on the 6H-SiC(0001) root(3) x root(3) surface for both p- and n-type material. With the use of exceptionally low tunnel currents, the tunneling spectra reveal distinct bands of empty and filled states, separated by 2.0 eV. The states are located at the same spatial position, thereby supporting a silicon adatom model which predicts a Mott-Hubbard type density of states.

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