Published in Mat. Res. Soc. Symp. Proc. Vol. 482, 363 (1998).

Scanning Tunneling Microscopy Observation of Surface Reconstruction of GaN on Sappire and 6H-SiC

A. R. Smith, V. Ramachandran, R. M. Feenstra
Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213
D. W. Greve
Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213
J. Neugebauer
Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, D-14195 Berlin, Germany
J. E. Northrup
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304
M.-S. Shin, M. Skowronski
Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213

Abstract

We report studies of the surface structure of MBE-grown GaN layers on sapphire (0001) and 6H-(0001) SiC substrates. A different set of reconstructions is observed for nitrogen-face and gallium-face layers. The gallium-face has so far only been grown on MOCVD GaN/sapphire substrates, while the nitrogen-face has been obtained on SiC and bare sapphire substrates.

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