John and Claire Bertucci Distinguished Professor of Materials Science and Engineering
Robert F. Davis is John and Claire Bertucci Distinguished Professor of Materials Science and Engineering. He received his Ph.D. in Materials Science and Engineering from the University of California, Berkeley. He is a member of the National Academy of Engineering, a Fellow of the American Ceramic Society and a member of the Materials Research Society and TMS. He has won numerous awards including the ALCOA Distinguished Research Award, the ALCOA Award for Research Performance in a Given Year, the Alumni Research Award, the ORNL Excellence in Publications Award, the Richard M. Fulrath Memorial Award from the American Ceramic Society, the R.J.R. Reynolds Award, the Alexander Holladay Medal for Excellence in Teaching, Research and Outreach, the Japan Fine Ceramics Association 2006 International Prize and the TMS John Bardeen Award for Research in Electronic Materials. He received the National Collegiate Inventor of the Year award for 1999. He has been a guest lecturer of the Troisiéme Cycle de la Physique en Suisse Romande. His research interests include (i) growth and characterization of SiC, Ga2O3, GaN, AlN, and nitride alloy thin films and (ii) electronic device-related research including ion implantation, development of gate and field insulators and reactive plasma etching. He has edited or co-edited seven books, authored or co-authored more than 275 chapters in edited proceedings or in books, published more than 430 peer reviewed papers in archival Journals and given more than 170 invited presentations.
EducationPh.D., University of California, Berkeley
The present suite of wide bandgap electronic materials of the III-Nitrides, SiC and selected oxide materials such as Ga2O3 are technologically important for (1) optoelectronic devices including light-emitting diodes and semiconductor lasers that emit in the green, blue and ultra-violet regions of the spectrum for applications in solid-state lighting, data storage and optical indicators; (2) microelectronic devices for high-frequency, high-power and high-temperature applications and (3) gas and biological sensors. Moreover, the size of some of these devices will continue to decrease until they comprise only a few atoms. Professor Davis’ research interests focus on the vertical integration from thin film growth of the material device structures and their structural, microstructural, chemical, optical and electrical characterization to the development and fundamental investigations of gate and field insulators, plasma etching, ion implantation, and device fabrication and characterization. A principal objective of all the research in the Davis laboratories is to provide continuous feedback to-and-from the team members concerning fundamental problems that are hindering the continued development of the materials of choice and/or the devices of interest that are being fabricated from these materials. Professor Davis’ technological interests include junction-based light-emitting materials and devices, high-temperature materials, and the use of semiconductor and other materials in energy saving applications.
Sean W. King, Robert J. Nemanich, Robert F. Davis, "Photoemission Investigation of the Schottky Barrier at the Sc/3C-SiC(111) Interface" Wiley Online Library, DOI10.1002/pssb.201451340, December 2014.
Sean W. King, Robert F. Davis and Robert J. Nemanich, “Gas Source Molecular Beam Epitaxy of Scandium Nitride on Silicon Carbide and Gallium Nitride Surfaces”, Journal of Vacuum Science and Technology A 32, 061504-1 – 061504-13 (2014).
Sean W. King, Robert J. Nemanich, Robert F. Davis, “Valence and Conduction Band Alignment at ScN interfaces with 3C-SiC(111) and 2H-GaN(0001)”, Applied Physics Letters 105, 081606-1 – 081606-4 (2014).
Sean W. King, Robert F. Davis and Robert J. Nemanich, “Desorption and Sublimation Kinetics for Fluorinated Aluminum Nitride Surfaces”, Journal of Vacuum Science and Technology A 32, 051402-1 – 051402-13 (2014).
K. Shenai, M. Dudley, and R. F. Davis, "Rugged Electrical Power Switching in Semiconductors – A Systems Approach", Proceedings IEEE 102 , 35 – 52 (2014).
Sean W. King, Robert J. Nemanich, Robert F. Davis, "Photoemission Investigation of the Schottky Barrier at the Sc/3C-SiC(111) Interface", Physica Status Solidi B 252, 391 - 396 (2015). DOI: 10.1002/pssb.201451340.
Robert F. Davis, “Substrates and Epitaxial Deposition Processes for Group-III Nitride Thin Films and Power Device Heterostructures”, Invited paper, Materials Research Bulletin 40, pp. 406 – 411 (2015).
Sean W. King, Robert J. Nemanich and Robert F. Davis, “Band Alignment at AlN/Si (111) and (001) Interfaces”, Journal of Applied Physics 118, 045304-1 – 045304-5 (2015). DOI: 10.1063/1.4927515.
Sean W. King, Robert F. Davis, Richard J. Carter, Thomas P. Schneider and Robert J. Nemanich, “Hydrogen Desorption Kinetics for Aqueous Hydrogen Fluoride and Remote Hydrogen Plasma Processed Silicon (001) Surfaces” Journal Vacuum Science and Technology A 33, 05E105-1 - 05E105-8 (2015).
Sean W. King, Robert J. Nemanich and Robert F. Davis, “Cleaning of Pyrolytic Hexagonal Boron Nitride Surfaces”, Surface and Interface Analysis 47, 798–803 (2015).
Sean W. King, Satoru Tanaka, Robert F. Davis and Robert J. Nemanich, “Hydrogen Desorption from Hydrogen Fluoride and Remote Hydrogen Plasma Cleaned Silicon Carbide (0001) Surfaces”, Journal Vacuum Science and Technology A 33, 05E105-1 – 05E105-8 (2015). doi: 10.1116/1.4921526.
Justin P. Freedman, Xiaoxiao Yu, Robert F. Davis, Andrew J. Gellman, Jonathan A. Malen, “Thermal Interface Conductance Across Metal Alloy-dielectric Interfaces”, Physical Review B 93, 035309-1 – 035309-7 (2016).
Fang Liu, Li Huang, Lisa M. Porter and Robert F. Davis, “Analysis of Compositional Uniformity in AlxGa1-xN Thin Films Using Atom Probe Tomography and Electron Microscopy”, Journal of Vacuum Science and Technology A, 34, 041510-1 – 041510-8 (2016); doi: 10.1116/1.4953410.
Robert F. Davis, “Organometallic Vapor Phase Epitaxial Growth of Group III Nitrides”, “Reference Modules in Materials Science and Materials Engineering”, Elsevier 2016.
Yao Yao, Raveena Gangireddy, Jaewoo Kim, Kalyan Kumar Das, Robert F. Davis, and Lisa M. Porter, "Electrical Behavior of β-Ga2O3 Schottky Diodes with Different Schottky Metals", Journal of Vacuum Science and Technology B, 35, 03D113 (2017). http://dx.doi.org/10.1116/1.4980042
Yao Yao, Robert F. Davis and Lisa M. Porter, "Investigation of Different Metals as Ohmic Contacts to β-Ga2O3: Comparison and Analysis of Electrical Behavior, Morphology, and Other Physical Properties", Journal of Electronic Materials, 46 , 2053-2060 (2017). http://dx.doi.org/10.1007/s11664-016-5121-1
Yao Yao, Robert F. Davis and Lisa M. Porter, "Investigation of Different Metals as Ohmic Contacts to β-Ga2O3: Comparison and Analysis of Electrical Behavior, Morphology, and Other Physical Properties", Journal of Electronic Materials, 46 , 2053-2060 (2017). DOI: 10.1007/s11664-016-5121-1
Robert F. Davis, "Silicon Carbide". In: Reference Module in Materials Science and Materials Engineering. Saleem Hashmi, Ed. vol. 13, pp. 1–10 (2017). Oxford: Elsevier.
Yao Yao, Serdal Okur, Gary Tompa, Tom Salagaj, Nick Sbrockey, Robert F. Davis, and Lisa Porter, Growth and Characterization of α-, β-, and ε- Phases of Ga2O3 using MOCVD and HVPE Techniques", Materials Research Letters 6 268-275, 2018. DOI: 10.1080/21663831.2018.1443978 (Published online March 7, 2018.)
Fellow, Materials Research Society