Publications
1. “Thermal-gradient-driven elemental segregation in Ge2Sb2Te5 phase change memory cells”, P. Yeoh, Y. Ma, D. A. Cullen, J. A. Bain, and M. Skowronski, Appl. Phys. Lett. 114, 163507 (2019)2. "Intrinsic current overshoot during thermal-runaway threshold switching events in TaOx devices", J. M. Goodwill and M. Skowronski, J. Appl. Phys. 126, 035108 (2019)
3. “Quantification of compositional runaway during electroformation of TaOx resistive switching devices” Y. Ma, J. M. Goodwill, and M. Skowronski, 2019 IEEE Int. Memory Workshop, Monterey.
4. "Stable metallic enrichment in conductive filaments in TaOx-based resistive switches arising from competing diffusive fluxes", Ma, D. Li, D. A. Cullen, J. D. Poplawsky, K. L. More, J. A. Bain, and M. Skowronski, Adv. Electron. Mater. 1800954 (2019)
5. "Spontaneous current constriction in threshold switching devices", M. Goodwill, G. Ramer, D. Li, B. D. Hoskins, G. Pavlidis, J. J. McClelland, A. Centrone, J. A. Bain, and M. Skowronski, Nature Communications, 10, 1628 (2019)
6. "Formation of the conducting filament in TaOx-resistive switching devices by thermal-gradient-induced cation accumulation", Y. Ma, D. Li, A. A. Herzing, D. A. Cullen, B. T. Sneed, K. L. More, N. T. Nuhfer, J. A. Bain, and M. Skowronski, ACS Appl. Mater. & Interfaces, 10, 23187 (2018)
7. "Switching dynamics of TaOx-based threshold switching devices", J. M. Goodwill, D. K. Gala, J. A. Bain, and M. Skowronski, J. Appl. Phys. 123, 115105 (2018)
8. "Scaling behavior of oxide-based electrothermal threshold switching devices", Li, J. M. Goodwill, J. A. Bain, and M. Skowronski, Nanoscale 9, 14139 (2017)
9. "ON state evolution in lateral and vertical VO2 threshold switching devices", Li, A. A. Sharma, N. Shukla, H. Paik, J. M. Goodwill, S. Datta, D. G. Schlom, J. A. Bain, and M. Skowronski, Nanotechnology 28, 405201 (2017)
10. "Growth and electronic properties of nanolines on TiO2-terminated SrTiO3 (001) surfaces", W. Yan, W. Sitaputra, M. Skowronski, and R. M. Feenstra, J. Appl. Phys. 122, 124305 (2017)
11. "Electro-Thermal Model of Threshold Switching in TaOx‑Based Devices", J. M. Goodwill, A. Sharma, D. Li, J. A. Bain, and M. Skowronski, ACS Appl. Mater. Interfaces 9, 11704 (2017)
12. "Joule heating-induced metal-insulator transition in epitaxial VO2/TiO2 devices", D. Li, A. A. Sharma, D. K. Gala, N. Shukla, H. Paik, S. Datta, D. G. Schlom, J. A.Bain and M. Skowronski, ACS Appl. Mater. & Interfaces 8, 12908 (2016)
13. "Transient thermometry and high resolution transmission electron microscopy analysis of filamentary resistive switches", J. Kwon, A. A. Sharma, C. Y. Chen, A. Fantini, M. Jurczak, A. A. Herzing, J. A. bain, Y. N. Picard, and M. Skowronski, ACS Appl. Mater. Interfaces 8, 20176 (2016)
14. "Low temperature electroformation of TaOx-based resistive switching devices", D. K. Gala, A. A. Sharma, D. S. Li, J. M. Goodwill, J. A. Bain, and M, Skowronski, Appl. Phys. Lett. Mater. 4, 016101 (2016)
15. "Low-power, high performance S-NDR oscillators for stereo (3D) vision using directly-coupled oscillator networks", A. A. Sharma, Y. Kesim, M. Shulaker, C. Kuo, C. Augustine, H. S. P. Wong, S. Mitra, M. Skowronski, J. A. Bain, and J. A. Weldon, 2016 IEEE Symp. VLSI Technol. (2016)
16. "Transient thermometry and HRTEM analysis of RRAM thermal dynamics during switching and failure", Kwon, A. A. Sharma, C. Y. Chen, A. Fantini, M. Jurczak, J. A. Bain, Y. N. Picard, and M. Skowronski, 2016 IEEE Int. Reliability Phys. Symp. (2016).
17. "Oxygen vacancy creation, drift, and aggregation in TiO2-based resistive switches at low temperature and voltage", J. Kwon, A. A. Sharma, J. A. Bain, Y. N. Picard and M. Skowronski, Adv. Funct. Mater. 25, 2876 (2015)
18. "Thermometry of Filamentary RRAM Devices", Yalon, A. A. Sharma, M. Skowronski, J. A. Bain, D. Ritter, and I. V. Karpov, " IEEE Trans. Electron Dev. 62, 2972 (2015)
19. "High-Frequency TaOx-Based Compact Oscillators", A. Sharma, Y. Li, M. Skowronski, J. A. Bain, and J. A. Weldon, IEEE Trans. Electron Dev. 62, 3857 (2015)
20. "Dynamics of electroforming in binary metal oxide-based resistive switching memory", A. A. Sharma, I. V. Karpov, R. Kotlyar, J. Kwon, M. Skowronski, and J. A. Bain, J. Appl. Phys. 118, 114903 (2015)
21. "Novel CMOS-compatible a-Si based oscillator and threshold switch", A. A. Sharma, M. Skowronski, J. A. Bain, and J. A. Weldon, 45th European Solid State Device Research Conf. (ESSDERC), (2015).
22. "Glide of threading edge dislocations after basal plane dislocation conversion during 4H-SiC epitaxial growth" Abadier, H. Song, T. S. Sudarshan, Y. N. Picard, and M. Skowronski, J. Crystal Growth 418, 7 (2015)
23. "Oxygen vacancies on SrO-terminated SrTiO3(001) sufaces studied by scanning tunneling microscopy", W. Sitaputra, N. Sivadas, M. Skowronski, D. Xiao, and R. M. Feenstra, Phys. Rev. B 91, 205408 (2015)
24. "Topographic and electronic structure of cleaved SrTiO3(001) surfaces", W. Sitaputra, M. Skowronski, and R. M. Feenstra, J. Vac. Sci. Technol. A 33, 031402 (2015)
25. "In situ TEM imaging of defect dynamics under electrical bias in resistive switching rutile-TiO2", R. J. Kamaladasa, A. A. Sharma, Y. T. Lai, W. Chen, P. A. Salvador, J. A. Bain, M. Skowronski and Y. N. Picard, Microscopy and Microanalysis 21, 140 (2015)
26. "Electronic instabilities leading to electroformation of binary metal oxide-based resistive switches", A. Sharma, M. Noman, M. Adbelmoula, M. Skowronski, and J. A. Bain, Adv. Funct. Mater. 24, 5522 (2014)
27. "Mechanism of localized electrical conduction at the onset of electroforming in TiO2 based resistive switching devices", M. Noman, A. A. Sharma, Y. M. Lu, R. Kamaladasa, M. Skowronski, P. A. Salvador, and J. A. Bain, Appl. Phys. Lett. 104, 113510 (2014)
28. "In situ biasing TEM investigation of resistive switching events in TiO2-based RRAM", J. Kwon, Y. N. Picard, M. Skowronski, A. A. Sharma, and J. A. Bain, 2014 IEEE Int. Reliability Phys. Symp., (2014).
29. "High-speed in-situ pulsed thermometry in oxide RRAMs", A. A. Sharma, M. Noman, M. Skowronski, and J. A. Bain, 2014 int. Symp. VLSI Technol., Systems and Application (2014).
30. "Nucleation of in-grown stacking faults and dislocation half-loops in 4H-SiC epitaxy", Abadier, R. L. Myers-Ward, N. A. Mahadik, R. E. Stahlbush, V. D. Wheeler, L. O. Nyakiti, C. R. Eddy, Jr., D. K. Gaskill, H. Song, T. S. Sudarshan, Y. N. Picard, and M. Skowronski, J. Appl. Phys. 114, 123502 (2013)
31. "Dislocation impact on resistive switching in single-crystal SrTiO3", J. Kamaladasa, M. Noman, W. Chen, P. A. Salvador, J. A. Bain, Y. N. Picard, J. Appl. Phys. 113, 234510 (2013)
32. "Impact of Joule heating on the microstructure of nanoscale TiO2 switching devices", Y. M. Lu, M. Noman, Y. N. Picard, J. A. Bain, P. A. Salvador, and M. Skowronski, J. Appl. Phys. 113, 163703 (2013)
33. "Transient characterization of the electroforming process in TiO2 based resistive switching devices", Noman, A. A. Sharma, Y. M. Lu, M. Skowronski, P. A. Salvador, and J. A. Bain, Appl. Phys. Lett. 102, 023507 (2013)
34. "Comparison of electric field dependent activation energy for electroformation in TaOx and TiOx based RRAMs", A. A. Sharma, M. Noman, M. Skowronski, and J. A. Bain, 2013 IEEE Int. Integrated Reliability Workshop (2013), DOI: 10.1109/IIRW.2013.6804180
35, "Elimination of high transient currents and electrode damage during electroformation of TiO2-based resistive switching devices", Y. M. Lu, M. Noman, W. Chen, P. A. Salvador, J. A. Bain, and M. Skowronski, J. Phys. D Appl. Phys. 45, 395101 (2012)
36. "Nucleation of 3C-SiC associated with threading edge dislocations during chemical vapor phase deposition", M. Abadier, R. A. Berechman, P. G. Neudeck, A. J. Trunek, and M. Skowronski, J. Crystal Growth 347, 45 (2012)
37. "Dependence of spontaneous polarization on stacking sequence in SiC revealed by local Schottky barrier height variations over a partially formed 8H-SiC layer on a 4H-SiC substrate" Park, H. S. Go, Y. Jeon, J. P. Pelz, X. Zhang, and M. Skowronski, Appl. Phys. Lett. 99, 252102 (2012)
38. "Trapezoid defect in 4H-SiC epilayers", R. A. Berechman, S. Chung, G. Chung, E. Sanchez, N. A. Mahadik, R. E. Stahlbush, and M. Skowronski, J. Crystal Growth 338, 16 (2012)
39. "Local heating-induced plastic deformation in resistive switching devices" Jiang, R. J. Kamaladasa, Y. M. Lu, A. Vicari, R. Berechman, P. A. Salvador, J. A. Bain, Y. N. Picard, and M. Skowronski, J. Appl. Phys. 110, 054514 (2011)
40. "Mobility of oxygen vacancy in SrTiO3 and its implications for oxygen-migration-based resistance switching", W. Jiang, M. Noman, Y. M. Lu, J. A. Bain, P. A. Salvador, and M. Skowronski, J. Appl. Phys. 110, 034509 (2011)
41. "Secondary electron dopant contrast imaging of compound semiconductor junctions", S. Chung, V. Wheeler, R. Myers-Ward, D. K. Gaskill, M. Skowronski and Y. N. Picard, J. Appl. Phys. 110, 014902 (2011)
42. "Direct observation of basal-plane to threading edge dislocation conversion in 4H-SiC epitaxy", Chung, V. Wheeler, R. Myers-Ward, C. R. Eddy, D. K. Gaskill, P. Wu, Y. N. Picard and M. Skowronski, J. Appl. Phys. 109, 094906 (2011)
43. “Thermographic analysis of localized conductive channels in bipolar resistive switching devices”, M. Lu, W. K. Jiang, M. Noman, J. A. Bain, P. A. Salvador, and M. Skowronski, J. Phys. D Appl. Phys. 44, 185103 (2011)
44. “Computational investigations into the operating window of memristive devices based on homogeneous ionic motion” Noman, W. K. Jiang, P. A. Salvador, M. Skowronski, and J. A. Bain, Appl. Phys. A: Mat. Sci. and Proc. 102, 877 (2011)
45. “Electronic structure analysis of threading screw dislocations in 4H-SiC using electron holography” Chung, R. A. Berechman, M. R. McCartney, and M. Skowronski, J. Appl. Phys. 109, 034906 (2011)
46. "4H-SiC epitaxy with very smooth surface and low basal plane dislocation on 4-degrees off axis wafer" Chung, M. J. Loboda, J. Zhang, J. W. Wan, E. P. Carlson, T. J. Toth, R. E. Stahlbush, R. Berechman, S. G. Sundaresan, and R. Singh, Materials Sci. Forum, 679-680, 123 (2011)
47. "Effect of nitrogen doping on basal plane dislocation reduction in 8o off-cut 4H-SiC epilayers", V. D. Wheeler, B. L. VanMill, R. L. Myers-Ward, S. Chung, Y. N. Picard, M. Skowronski, R. E. Stahlbush, N. A. Mahadik, C. R. Eddy, and D. K. Gaskill, Materials Sci. Forum 679-680, 63 (2011)
48. “Electrical characterization of 4H-SiC avalanche photodiodes containing threading edge and screw dislocations” A. Berechman, M. Skowronski, S. Soloviev, and J. Appl. Phys. 107, 114504 (2010)
49. “Electron Beam Induced Current investigation of Pt/SrTiO3-x interface exposed to chemical and electrical stresses”, W. Jiang, D. Evans, J. A. Bain, M. Skowronski, and P. A. Salvador, Appl. Phys. Lett. 96, 092102 (2010)
50. “Defect level of the carbon vacancy-carbon antisite pair center in SI 4H-SiC”, M. E. Zvanut, G. Ngetich, H. J. Chung, A. Y. Polyakov, M. Skowronski, N. Y. Garces, and E. R. Glaser, Materials Science Forum 600-603, 385 (2009)
51. “Evolution of basal plane dislocations during 4H-SiC epitaxial growth” E. Stahlbush, B. L. VanMil, K. X. Liu, K. K. Lew, R. L. Myers-Ward, D. K. Gaskill, C. R. Eddy, X. Zhang, and M. Skowronski, Materials Science Forum 600-603, 317 (2009)
52. “Differences in emission spectra of dislocations in 4H-SiC epitaxial layers”, X. Liu, X. Zhang, R. E. Stahlbush, M. Skowronski, and J. D. Caldwell, Materials Science Forum 600-603, 345 (2009)
53. “Controlling the Bi content, phase formation, and epitaxial nature of BiMnO3 thin films fabricated using conventional pulsed laser deposition, hybrid pulsed laser deposition, and solid state epitaxy”, S. Havelia, S. Wang, M. Skowronski, and P. A. Salvador, J. Appl. Phys. 106, 123509 (2009)
54. "Spheroid 3C inclusions in 8 degrees off-axis 4H-SiC epilayers grown by chemical vapor deposition", Zhang, L. Li, J. J. Sumakeris, M. J. Paisley, M. J. O'Loughlin, J. Appl. Phys. 105, 123529 (2009)
55. "Electrical and structural investigation of triangular defects in 4H-SiC junction barrier Schottky devices" A. Berechman, M. Skowronski, Q. Zhang, J. Appl. Phys. 105, 074513 (2009)
56. “Origin of basal plane bending in hexagonal silicon carbide single crystals” W. Lee, M. Skowronski, E. K. Sanchez, and G. Chung, J. Crystal Growth 310, 4126 (2008)
57. “MgO films grown on yttria-stabilized zirconia by molecular beam epitaxy”, O. Maksimov, P. J. Fisher, M. Skowronski, P. A. Salvador, M. Snyder, J, Xu, and X. Weng, J. Crystal Growth 310, 2760 (2008)
58. “A study of vacancies and vacancy pair defects in 4H-SiC grown by halide chemical vapor deposition” M. E. Zvanut, G. Ngetich, H. J. Chung, A. Y. Polyakov, and M. Skowronski, J. Materials Sci.- Materials in Electronics 19, 678 (2008)59. “Nondestructive dislocation delineation using topographically enhanced imaging of surface morphologies in 4H-SiC epitaxial layers” Y. N. Picard, K. X. Liu, R. E. Stahlbush, M. E. Twigg, X. Zhang, and M. Skowronski, J. Appl. Phys. 103, 074904 (2008)
60. “Growth and structural characterization of epitaxial Ba0.6Sr0.4TiO3 films deposited on REScO3(110) (RE = Dy, Gd) substrates using pulsed laser deposition”, H. Du, P. J. Fisher, M. Skowronski M, P. A. Salvador, and O. Maksimov, J. Crystal Growth 310, 1991 (2008)61. “Structural characterization of TiO2 films grown on LaAlO3 and SrTiO3 substrates using reactive molecular beam epitaxy”, X. Weng, P. J. Fisher, M. Skowronski, P. A. Salvador, and O. Maksimov, J. Crystal Growth 310, 545 (2008)
62. “Stoichiometric, nonstoichiometric, and locally nonstoichiometric SrTiO3 films grown by molecular beam epitaxy”, P. Fisher, H. Du, M. Skowronski, P. A. Salvador, O. Maksimov, and X. Weng, J. Appl. Phys. 103, 013519 (2008)63. “Gate I-V characteristics degradation in AlGaN/AlN/GaN HEMTs”, L. Li, M. Skowronski, 2007 Int. Semiconductor Device Research Symp., vol. 1 & 2, 456 (2007)
64. “Triangular shaped defects limiting reverse blocking performance of 4H silicon carbide high power junction barrier Schottky devices” R. A. Berechman, M. Skowronski, and Q. Zhang, 2007 Int. Semiconductor Device Research Symp., vol. 1 & 2, 543 (2007)65. “Growth and characterization of 3C–SiC and 2H–AlN/GaN films and devices produced on step-free 4H–SiC mesa substrates”, P. G. Neudeck, H. Du, M. Skowronski, D. J. Spry, and A. J. Trunek, J. Phys. D: Appl. Phys. 40, 6139 (2007)
66. “Glide and multiplication of basal plane dislocations during 4H-SiC homoepitaxy”, X. Zhang, M. Skowronski, K. X. Liu, R. E. Stahlbush, J. J. Sumakeris, M. J. Paisley, and M. J. O'Loughlin, J. Appl. Phys. 102, 093520 (2007)67. “Morphology of basal plane dislocations in 4H-SiC homoepitaxial layers grown by chemical vapor deposition”, X. Zhang, S. Ha, Y. Hanlumnyang, C. H. Chou, V. Rodriguez, M. Skowronski, J. J. Sumakeris, M. J. Paisley, and M. J. O'Loughlin. J. Appl. Phys. 101, 053517 (2007)
68. “A series of layered intergrowth phases grown by molecular beam epitaxy: SrmTiO2+m(m=1–5)”, P. Fisher, S. Wang, M. Skowronski, P. A. Salvador, M. Snyder, and O. Maksimov, Appl. Phys. Lett. 91, 252901 (2007)69. “Electrical properties and deep levels spectra of bulk SiC crystals grown by hybrid physical–chemical vapor transport method”, M.A. Fanton, Q. Li, A.Y. Polyakov and M. Skowronski J. Crystal Growth, 300, 314 (2007)
70. "Developing an effective and robust process for manufacturing bipolar SiC power devices”, J. J. Sumakeris, B. A. Hull, M. J. O’Loughlin, M. Skowronski, and V. Balakrishna, Mater. Sci. Forum 556-557, 77 (2007)71. "Point defects in 4H SiC grown by Halide Chemical Vapor Deposition”, M. E. Zvanut, H. J. Chung, A. Y. Polyakov, and M. Skowronski, Mater. Sci. Forum, 556-557, 473 (2007)
72. “Defects Limiting Minority Carrier Lifetime In 4H-SiC Epilayers”, P. B. Klein, B. V. Shanabrook, S. W. Huh, A. Y. Polyakov, M. Skowronski, J. J.Sumakeris and M. J. O’Loughlin, Electrochem. Soc. Transactions, 3, 19 (2006)73. “Do you really expect to grow epilayers on that? A rationale for growing epilayers on roughened surfaces” J. J. Sumakeris, B. A. Hull, M. J. O’Loughlin, S. Ha, M. Skowronski, J. W. Palmour, C. H. Carter, Mater. Res. Soc. Symp. Proc. 991, 59 (2006)
74. “Recent results from epitaxial growth on step free 4H-SiC mesas” P. G. Neudeck, A. J. Trunek, D. J. Spry, J. A. Powell, H. Du, M. Skowronski, N. B. Bassim, M. A. Mastro, M. E. Twigg, R. T. Holm, R. L. Henry, and C. R. Eddy, Mater. Res. Soc. Symp. Proc. 991, 85 (2006)75. “CVD growth of 3C-SiC on 4H/6H mesas”, P. G. Neudeck, A. J. Trunek, D. J. Spry, J. A. Powell, H. Du, M. Skowronski, X. R. Huang, and M. Dudley, Chemical Vapor Deposition 12, 531 (2006)
76. “Structural and optical properties of GaN films grown on GaAs substrates by molecular beam epitaxy” O. Maksimov, Y. Gong, H. Du., P. Fisher , M. Skowronski, I. L. Kuskovsky, and V. D. Heydemann, Vacuum 80, 1042 (2006)77. “Structural properties of SrO thin films grown by molecular beam epitaxy on LaAlO3 substrates” O. Maksimov, V. D. Heydemann, P. Fisher, M. Skowronski, and P. A. Salvador, Appl. Phys. Lett. 89, 262903 (2006)
78. “Growth, structure, and morphology of TiO2 films deposited by molecular beam epitaxy in pure ozone ambients” P. Fisher, O. Maksimov, H. Du, V. D. Heydemann, M. Skowronski, and P. A. Salvador, Microelectron. J. 37, 1493 (2006)79. “Transmission electron microscopy analysis of mechanical polishing-related damage in silicon carbide wafers” J. R. Grim, M. Benamara, M. Skowronski, W. J. Everson, V. D. Heydemann, Semiconductor Sci. and Technol. 21, 1709 (2006)
80. “Effect of nitridation on crystallinity of GaN grown on GaAs by MBE” O. Maksimov, P. Fisher, M. Skowronski, V. D. Heydemann, Materials Chemistry and Physics 100, 457 (2006)81. “Growth of GaN films on GaAs substrates in an As-free environment” O. Maksimov, P. Fisher, H. Du, J. D. Acord, X. Weng, M. Skowronski, and V. D. Heydemann, J. Vac. Sci. & Technol. B 24, 1671 (2006)
82. “Lifetime limiting defects in n- 4H-SiC epilayer” P. B. Klein, B. V. Shanabrook, S. W. Huh, A. Y. Polyakov, M. Skowronski, J. J. Sumakeris, and M. J. O’Loughlin, Appl. Phys. Lett. 88, 052110 (2006)83. “Effects of hydrogen on the properties of SiC crystals grown by physical vapor transport: Thermodynamic considerations and experimental results” M. A. Fanton, Q. Li, A. Y. Polyakov AY, M. Skowronski, R. Cavalero, and R. Ray, J. Crystal Growth 287, 339 (2006)
84. “Degradation of hexagonal silicon-carbide-based bipolar devices” M. Skowronski and S. Ha, J. Appl. Phys. 99, 011101 (2006)
86. “Neutron irradiation effects in AlGaN/GaN heterojunctions” A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. V. Markov, S. J. Pearton, N. G. Kolin, D. I. Merkurisov, V. M. Boiko, M. Skowronski, I. H. Lee, Physica B-Condensed Matter 376, 523 (2006)
87. “Halide-CVD growth of bulk SiC crystals”, A.Y. Polyakov, M.A. Fanton, M. Skowronski, H.J. Chung, S. Nigam, and S.W. Huh, Mater. Sci. Forum 527-529, 21(2006)88. “Growth kinetics and polytype stability in Halide Chemical Vapor Deposition of SiC”, S. Nigam, H. J. Chung, S. W. Huh, J. Grim, A. Y. Polyakov, M. A. Fanton, B. Weiland, D. W. Snyder, M. Skowronski, Mater. Sci. Forum. 527-529 27, 2006
89. “Resistivity distribution in undoped 6H-SiC boules and wafers” Q. Li, A.Y. Polyakov, M. Skowronski, E.K. Sanchez, M.J. Loboda, M.A. Fanton, T. Bogart, D. Gamble, N.B. Smirnov, and Yu. Makarov, Mater. Sci. Forum 527-529, 51 (2006)90. “Hybrid Physical-Chemical Vapor Transport Growth of SiC bulk crystals” M.A. Fanton, Q. Li, A.Y. Polyakov, R.L. Cavalero, R.G. Ray, B.E. Weiland, and M. Skowronski, Mater. Sci. Forum 527-529, 103 (2006)
91. “Techniques for minimizing the basal plane dislocation density in SiC epilayers to reduce Vf drift in SiC bipolar power devices”, J.J. Sumakeris, J.P. Bergman, M.K. Das, C. Hallin, B.A. Hull, E. Janzén, H. Lendenmann, M.J. O’Loughlin, M.J. Paisley, S. Ha, M. Skowronski, J. W. Palmour, and C.H. Carter, Jr., Mater. Sci. Forum 527-529 141 (2006)
92. “Relaxation mechanism of the defect-free 3C-SiC epitaxial films grown on step-free 4H SiC mesas”, H. Du, M. Skowronski, P. G. Neudeck, A. J. Trunek, D. J. Spry, J. A. Powell, Materials Science Forum 527-529, 279 (2006)
93. “Structure of carrot defects in 4H-SiC epilayers”, X. Zhang, S. Ha, M. Benamara, M. Skowronski, J.J. Sumakeris, S. Ryu, M.J. Paisley, and M.J. O’Loughlin, Mater. Sci. Forum 527-529 327 (2006)
94. “Observation of free carrier redistribution resulting from stacking fault formation in annealed 4H-SiC” O.J. Glembocki, M. Skowronski, S.M. Prokes, D.K. Gaskill, and J.D. Caldwell, Mater. Sci. Forum 527-529, 347 (2006)
95. “Structure of “star” defect in 4H-SiC substrates and epilayers”, J.W. Lee, and M. Skowronski, Mater. Sci. Forum 527-529, 403 (2006)
96. “Deep traps and charge carrier lifetimes in 4H-SiC epilayers”, S.W. Huh, J.J. Sumakeris, A.Y. Polyakov, M. Skowronski, P.B. Klein, B.V. Shanabrook, and M.J. O’Loughlin, Mater. Sci. Forum 527-529, 493 (2006)
97. “Conditions and limitations of using low-temperature photoluminescence to determine residual nitrogen levels in semi-insulating SiC substrates”, E.R. Glaser, B.V. Shanabrook, W.E. Carlos, H.J. Chung, S. Nigam, A.Y. Polyakov, and M. Skowronski, Mater. Sci. Forum 527-529, 613 (2006)
98. “Electrical properties of undoped 6H- and 4H-SiC bulk crystals grown by Halide Chemical Vapor Deposition”, H.J. Chung, S.W. Huh, A.Y. Polyakov, S. Nigam, Q. Li, J. Grim, M. Skowronski, E.R. Glaser, W.E. Carlos, J.A. Freitas, M.A. Fanton, Mater. Sci. Forum 527-529, 625 (2006)
99. “Relationship between the EPR SI-5 signal and the 0.65 eV electron trap in 4H-and 6H-SiC polytypes”, N. Y. Garces, W. E. Carlos, E. R. Glaser, Materials Sci. Forum 527-529, 547 (2006)
100. “Preparation and evaluation of damage free surfaces on silicon carbide”, W.J. Everson, V.D. Heydemann, R.D. Gamble, D.W. Snyder, G. Goda, M. Skowronski, J. Grim, E. Berkman, J.M. Redwing, and J.D. Acord, Mater. Sci. Forum 527-529, 1091 (2006)
101. “Growth of nitrogen-doped SiC boules by halide chemical vapor deposition” M. A. Fanton, D. W. Snyder, B. Weiland, R. Cavalero, A. Y. Polyakov, M. Skowronski, and H. J. Chung, J. Crystal Growth 287, 359 (2006)
102. “Selectivity and residual damage of colloidal silica chemi-mechanical polishing of silicon carbide”, J. R. Grim, M. Skowronski, W. J. Everson, and V. D. Heydemann, Mater. Sci. Forum 527-529, 1095 (2006)
103. “Advances in silicon carbide electronics”, J. C. Zolper and M. Skowronski, MRS Bulletin 30, 273 (2005)
104. “Development of epitaxial SiC processes suitable for bipolar power devices” J. J. Sumakeris, M. Das, S. Ha, H. McD. Hobgood, E. Hurt, K. Irvine, M. J. Paisley, M. J. O’Loughlin, J. W. Palmour, M. Skowronski, C. H. Carter, Jr., Mater. Sci. Forum 483-485, 155 (2005)
105. “Growth kinetics study in halide chemical vapor deposition of SiC” S. Nigam, H. J. Chung, A. Y. Polyakov, M. A. Fanton,. B. E. Weiland, D. W. Snyder, and M. Skowronski, J. Crystal Growth 284, 112 (2005)
106. “Quantum well behavior of single stacking fault 3C inclusions in 4H-SiC p-i-n diodes studied by ballistic electron emission microscopy”, K. Park, J. P. Pelz, J. Grim, and M. Skowronski, Appl. Phys. Lett. 87, 232102 (2005)
107. “Structure of the carrot defect in 4H-SiC epitaxial layers”, M. Benamara, X. Zhang, and M. Skowronski, P. Ruterana and G. Nouet, J. J. Sumakeris, M. J. Paisley, and M. J. O’Loughlin, Appl. Phys. Lett. 86, 021905 (2005)
108, “Bulk growth of high purity 6H-SiC single crystals by halide chemical vapor deposition” H. J. Chung, A. Y. Polyakov, S.W. Huh, S. Nigam, and M. Skowronski, M. A. Fanton, B. Weiland, and D. W. Snyder, J. Appl. Phys. 97, 084913 (2005)
109. “Minority Carriers Diffusion Length Measurements in 6H-SiC” A. Y. Polyakov, Q. Li, O. Lopatiuk, L. Chernyak, E. K. Sanchez , S. W. Huh and M. Skowronski, J. Appl. Phys. 97, 053703 (2005)
110. “Properties of 6H-SiC crystals grown by hydrogen-assisted Physical Vapor Transport”, Q. Li, A. Y. Polyakov, M. Skowronski, M. A. Fanton, R. C. Cavalero, R. G. Ray, and B. E. Weiland, Appl. Phys. Lett. 86, 202102 (2005)
111. “Nonuniformities of electrical resistivity in undoped semi-insulating SiC wafers” Q. Li, A. Y. Polyakov, M. Skowronski, E. K. Sanchez, M. J. Loboda, M. A. Fanton, T. Bogart, R. D. Gamble, Yu. Makarov, A. Galyukov, J. Appl. Phys. 97, 113705 (2005)
112. “Pseudomorphic SiC:Ge alloys formed by Ge ion iplantation” M.W. Dashiell, G. Xuan, E. Ansorge, X. Zhang, J. Kolodzey, G. C. DeSalvo, J. R. Gigante, W. J. Malkowski, R.C. Clarke, J. Liu, and M. Skowronski, Appl. Phys. Lett. 85, 2253 (2004)
113. "Degradation of hexagonal silicon carbide-based bipolar devices", M. Skowronski, Int. Semiconductor Device Research Symp. (2005), DOI: 10.1109/ISDRS.2005.1596018
114. “Cross-sectional structure of carrot defects in 4H-SiC epilayers” X. Zhang, S. Ha, M. Benamara, M. Skowronski, M. J. O’Loughlin, and J. J. Sumakeris, Appl. Phys. Lett. 85, 5209 (2004)
115, “Dislocation nucleation in 4H silicon carbide epitaxy”, S. Ha, H.J. Chung, N.T. Nuhfer, M. Skowronski, J. Crystal Growth 262, 130 (2004)
116. “Doping-induced strain and relaxation of Al-doped 4H-SiC homo-epitaxial epilayers”, S. Huh, H. Chung, M. Benamara and M. Skowronski, J. J. Sumakeris, and M. J. Paisley, J. Appl. Phys. 96, 4637 (2004)
117. “Nucleation sites of recombination-enhanced stacking fault formation in silicon carbide p-i-n diodes”, S. Ha, and M. Skowronski, and H. Lendenmann, J. Appl. Phys. 96, 393 (2004)
118. “Electrical nonuniformities and their impact on the measured electron mobility in semi-insulating SiC crystals”, Q. Li, A. Y. Polyakov, and M. Skowronski, J. Appl. Phys. 96, 411 (2004)
119. “The driving force of stacking fault formation in silicon carbide p-i-n diodes” S. Ha, and M. Skowronski, J. J. Sumakeris, M. J. Paisley, and M. K. Das, Phys. Rev. Lett. 92, 175504 (2004)
120. “Stacking fault formation in silicon carbide p-i-n diodes of (11-20) orientation”, S. Ha, K. Hu, and M. Skowronski, J. J. Sumakeris, M. J. Paisley, M. K. Das, Appl. Phys. Lett. 84, 5267 (2004)
121. “Dislocation nucleation in 4H SiC epitaxy”, S. Ha, H. J. Chung, N. T. Nuhfer, M. Skowronski, J. Crystal Growth 262, 130 (2004)
122. “Growth of bulk SiC by Halide Chemical Vapor Deposition”, M. A. Fanton, M. Skowronski, D. S. Snyder, H. J. Chung, S. Nigam, B. Weiland, and S. W. Huh, Mater. Sci. Forum, 457-460, 87 (2004)
123. “Approaches to Stabilizing the Forward Voltage of Bipolar SiC Devices”, J. J. Sumakeris, M. Das, H. McD. Hobgood, S. G. Müller, M. J. Paisley, S. Ha, M. Skowronski, J. W. Palmour, and C. H. Carter, Jr., Mater. Sci. Forum, 457-460, 1113-1116 (2004)
124. “Chemi-mechanical polishing of on-axis semi-insulating SiC substrates”, V. D. Heydemann, W. J. Everson, R. D. Gamble, D. W. Snyder, and M. Skowronski, Mater. Sci. Forum 457-460, 805-808 (2004)
125. “Electrical characterization of semi-insulating 6H-SiC substrates“ E. K. Sanchez, J. Wan, S. Wang, M. Loboda, C. Li, and M. Skowronski, Mater. Sci. Forum 457-460, 669-672 (2004)
126. “Core structure and properties of partial dislocations in silicon carbide p-i-n diodes”, S. Ha, M. Benamara, M. Skowronski, H. Lendenmann, Appl. Phys. Lett. 83, 4957 (2003)
127. “Integrated process modeling and experimental validation of silicon carbide sublimation growth” R.-H. Ma, H. Zhang, S. Ha, and M. Skowronski, J. Crystal Growth 252, 523 (2003)
128. “High-resolution x-ray diffraction and optical absorption study of heavily nitrogen doped 4H-SiC”, H. J. Chung and M. Skowronski, J. Crystal Growth. 259, 52 (2003)
129. “ Surface-damage-induced threading dislocations in 6H-SiC layers grown by physical vapor transport” J. Q. Liu, E. K. Sanchez, and M. Skowronski, J. Electrochem, Soc.150, G223 (2003)
130. “Stacking fault formation in highly doped 4H-SiC epilayers during annealing” H. J. Chung, J. Q. Liu, A. Henry, and M. Skowronski, Mater. Sci. Forum, 433-436, 253 (2003)
131. “Dislocation loops formed during degradation of forward-biased 4H-SiC p-n junctions”, W. M. Vetter, J. Q. Liu, M. Dudley, M. Skowronski, H. Lendenmann, and C. Hallin, Mater. Sci. Eng. B98, 220 (2003)
132. “Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas During Step-Free Surface Heteroepitaxy” P. G. Neudeck, J. A. Powell, D. J. Spry, A. J. Trunek, X, Huang, W. M. Vetter, M. Dudley, M. Skowronski, and J. Liu, Mater. Sci. Forum 433-436, 213 (2003)
133. “Stacking fault formation in highly doped 4H-SiC epilayers during annealing”, H. J. Chung, J. Q. Liu, and M. Skowronski, Appl. Phys. Lett. 81, 3759 (2002)
134. “Recombination-enhanced defect motion in forward-biased 4H-SiC p-n diodes”, M. Skowronski, J. Q. Liu, W. M. Vetter, and M. Dudley, J. Appl. Phys. 92, 4699 (2002)
135. “Dislocation conversion in 4H silicon carbide epitaxy” S. Ha, P. Mieszkowski, M. Skowronski, and L. B. Rowland, J. Crystal Growth 244, 257 (2002).
136. “Spontaneous formation of stacking faults in heavily doped 4H-SiC during annealing” T. A. Kuhr, J. Q. Liu, H. H. Chung, and M. Skowronski, J. Appl. Phys. 92, 5863 (2002).
137. “Structural instability of 4H-SiC polytype induced by n-type doping” J. Q. Liu, H. J. Chung, T. Kuhr, Q. Li, and M. Skowronski, Appl. Phys. Lett. 80, 2111 (2002).
138. “Basal plane slip and formation of tilt boundaries in sublimation-grown hexagonal polytype silicon carbide single crystals” S. Ha, M. Skowronski, W. M. Vetter, and M. Dudley, J. Appl. Phys. 92, 778, (2002)
139. “A simple mapping method of elementary screw dislocations in homoepitaxial SiC layers”, S. Ha, W. M. Vetter, M. Dudley, M. Skowronski, Mater. Sci. Forum 389-393, 443-446 (2002).
140. “Growth-induced structural defects in SiC PVT boules” M. Skowronski, Mater. Sci. Forum 389-393, 385-390 (2002)
141. “Bending of basal plane dislocations in VPE grown 4H-SiC Epitaxial layers” S, Ha, P. Mieszkowski, L. B. Rowland, and M. Skowronski, Mater. Sci. Forum 389-393, 231-234 (2002)
142. “Microstructural characterization of recombination-induced stacking faults in high voltage SiC diodes” J. Q. Liu, M. Skowronski, C. Hallin, R. Soderholm, and H. Lendenmann, Mater. Sci. Forum 389-393, 1281-1284 (2002).
143. “Modeling for mass transfer and thermal stress of silicon carbide PVT growth”, R. H. Ma, H. Zhang, M. Dudley, S. Ha, and M. Skowronski, Proc. ASME Int. Mechanical Eng. Congress and Expo., 2002, New Orleans, Lo.
144. “Analysis of subsurface-damage-induced threading dislocations in Physical Vapor Transport growth of 6H-SiC”, J. Q. Liu, E. K. Sanchez, M. Skowronski, Mater. Sci. Forum 389-393, 415-418 (2002).
145. “Structure of 2D-nucleation-induced stacking faults in 6H-SiC” J. Q. Liu, E. K. Sanchez, and M. Skowronski, Mater. Sci. Forum 389-393, 435-438 (2002).
146. “Structure of recombination-induced stacking faults in high voltage SiC p-n junctions” J. Q. Liu, M. Skowronski, C. Hallin, R. Sodermann, H. Lendenmann, Appl. Phys. Lett. 80, 749 (2002).
147. “Nucleation of threading dislocations in sublimation grown silicon carbide” E. K. Sanchez, J. Q. Liu, M. De Graef, M. Skowronski, W. M. Vetter, M. Dudley, J. Appl. Phys. 91, 1143 (2002).
148. “The effect of surface finish on the dislocation density in sublimation grown SiC layers”, E. K. Sanchez, J. Liu, W.M. Vetter, M. Dudley, R. Bertke, W.C. Mitchel, and M. Skowronski, Mat. Res. Symp. Proc. 640, H1.3.1 (2001).
149. “Numerical simulation of RF heating for a SiC vapor growth system”, R. H. Ma, H. Zhang, V. Prasad, S. Ha, and M. Skowronski, Proc. ASME Int. Mechanical Eng. Congress and Expo., 2001, New York, NY.
150. “Hexagonal voids and the formation of micropipes during SiC sublimation growth” T. A. Kuhr, E. K. Sanchez, M. Skowronski, W. M. Vetter, and M. Dudley, J. Appl. Phys. 89, 4625 (2001)
151. “Assessment of polishing-related surface damage in silicon carbide” E. K. Sanchez, S. Ha, J. Grim, M. Skowronski, W. M. Vetter, M. Dudley, R. Bertke, and W. C. Mitchel, J. Electrochem. Soc. 149, G131 (2002).
152. “Formation of thermal decomposition cavities in Physical Vapor Transport of silicon carbide”, E. K. Sanchez, T. A. Kuhr, V. D. Heydemann, D. W. Snyder, G. S. Rohrer, and M. Skowronski, J. Electron. Mater. 29, 347 (2000)
153. “Identification of Prismatic Slip Bands in 4H SiC Boules Grown by Physical Vapor Transport”, S. Ha, N. T. Nuhfer, G. S. Rohrer, M. De Graef, and M. Skowronski, J. Electron. Mater. 29, L5 (2000)
154. “Origin of domain structure in hexagonal silicon carbide boules grown by the physical vapor transport method” S. Ha, N. T. Nuhfer, G. S. Rohrer, M. DeGraef, and M. Skowronski, J. Cryst. Growth 220, 308 (2000)
155. “Thermal Decomposition Cavities in Physical Vapor Transport Grown SiC”, E. K. Sanchez, V. D. Heydemann, D. W. Snyder, G. S. Rohrer, and M. Skowronski, Mater. Sci. Forum 338-342, 55 (2000)
156. “Nucleation of Dislocations during Physical Vapor Transport Growth of Silicon Carbide”, E. K. Sanchez, V. D. Heydemann, D. W. Snyder, G. S. Rohrer, and M. Skowronski, Mater. Sci. Forum 338-342, 63 (2000)
157. “Plastic deformation and residual stresses in SiC boules grown by PVT”, S. Ha, G. S. Rohrer, M. Skowronski, V. D. Heydemann, and D. W. Snyder, Mater. Sci. Forum 338-342, 67 (2000)
158. “Origin of threading dislocation arrays in SiC boules grown by PVT” S. Ha, N. T. Nuhfer, M. De Graef, G. S. Rohrer, and M. Skowronski, Mater. Sci. Forum 338-342, 477 (2000)
159. “X-ray Characterization of 3 inch Diameter Experimental 4H-SiC Wafers”, T. A. Kuhr, M. Skowronski, W. M. Vetter, and M. Dudley, Mater. Sci. Forum 338-342, 473 (2000)
160. “Evidence for localized Si-donor state and its metastable properties in AlGaN” C. Skierbiszewski, T. Suski, M. Leszczynski, M. Shin, M. Skowronski, M. D. Bremser, and R. F. Davis, Appl. Phys. Lett. 74, 3833 (1999)
161. “Metastable behavior of Si donor in (Al,Ga)N”, C. Skierbiszewski, T. Suski, M. Leszczynski, M. Shin, M. Skowronski, M. D. Bremser, R. F. Davis, Inst. Phys. Conf. Ser. 24, 992 (1999).
162. “The mechanism of micropipe nucleation at inclusions in silicon carbide” M. Dudley, X. R. Huang, W, Huang, A, Powell, S. Wang, P. Neudeck, M. Skowronski, Appl. Phys. Lett. 75, 784 (1999)
163. “GaN(0001) surface structures studied using scanning tunneling microscopy and first-principles total energy calculations” A. R. Smith, R. M. Feenstra, D. W. Greve, M. S. Shin, M. Skowronski, J. Neugebauer, and J. E. Northrup, Surface Sci. 423, 70 (1999)
164. “Inhomogeneities and defects in GaN and AlGaN epitaxial layers studied by SEM”A. V. Govorkov, A. Y. Polyakov, N. B. Smirnov, J. M. Redwing, M. Skowronski, M. Shin, Bulletin of the Russian Academy of Sciences. Physics, 62, 380 (1998)
165. “Scanning tunneling microscopy observation of surface reconstruction of GaN on sapphire and 6H-SiC” A. R. Smith, V. Ramachandran, R. M. Feenstra, D. W. Greve, J. Neugebauer, J. E. Northrup, M. Shin, and M. Skowronski, Mat. Res. Soc. Symp. Proc 482, 363 (1998)
166. “Schottky diodes on MOCVD grown AlGaN films” A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, D. W. Greve, M. Skowronski, M. Shin, and J. M. Redwing, J.M. MRS Internet Journal of Nitride Semiconductor Research, 3 (1998)
167. “SEM study of nonuniformities and defects in GaN and AlGaN epitaxial films”, A. V. Govorkov, A. Y. Polyakov, N. B. Smirnov, M. Skowronski, M. Shin, Izv. Akad. Nauk. 62, 471 (1998)
168. ”Surface reconstruction during molecular beam epitaxial growth of GaN (0001)”A. R. Smith, V. Ramachandran, R. M. Feenstra, D. W. Greve, A. Ptak, T. Myers, W. Sarney, L. Salamanca-Riba, M. Shin, and M. Skowronski, MRS Internet Journal of Nitride Semiconductor Research 3 (1998)
169. "Determination of wurtzite GaN lattice polarity based on surface reconstruction" A. R. Smith, R. J. Feenstra, D. W. Greve, M. Shin, M. Skowronski, J. Neugebauer, and J. E. Northrup, Appl. Phys. Lett. 72, 2114 (1998)
170. "Wurtzite GaN surface structures studied by scanning tunneling microscopy and reflection high energy electron diffraction" A. R. Smith, V. Ramachandran, R. M. Feenstra, D.W. Greve, M.-S. Shin, M. Skowronski, J. Neugebauer, and J. E. Northrup, J. Vac. Sci Technol. A 16, 1641 (1998)
171. “Microstructure and optical properties of epitaxial GaN on ZnO(0001) grown by reactive molecular beam epitaxy”, F. Hamadani, M. Yeadon, D. J. Smith, H. Tang, W. Kim, A. Salvador, A. E. Botchkarev, J. M. Gibson, A. Y. Polyakov, M. Skowronski, and H. Morkoc, J. Appl. Phys. 83, 983 (1998)
172. “The formation of super-dislocations / micropipe complexes in 6H-SiC”, J. Giocondi, G. S. Rohrer, M. Skowronski, V. Balakrishna, H. M. Hobgood, and R. H. Hopkins, Mater. Sci. Forum, 264-268, 371 (1998)
173. “Surface defects in GaN and AlxGa1-xN epilayers deposited on sapphire by organometallic vapor phase epitaxy”, M. Shin, A. Y. Polyakov, M. Skowronski, G. S. Rohrer, and R. G. Wilson, Mater. Sci. Forum 264-268, 1251 (1998)
174. “The structural evolution of Lely seeds during the initial stages of SiC sublimation growth”, V. D. Heydemann, E. K. Sanchez, G. S. Rohrer, M. Skowronski Mater. Sci. Forum 264-268, 37 (1998)
175. “Deep centers and their spatial distribution in undoped GaN films grown by organometallic vapor phase epitaxy”, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, M. Shin, M. Skowronski, and D. W. Greve, J. Appl. Phys. 84, 870 (1998)
176. “Properties of Si donors and persistent photoconductivity in AlGaN”, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, M. G. Milvidskii, J. M. Redwing, M. Shin, M. Skowronski, D. W. Greve, and R. G. Wilson, Solid-State Electronics 42, 627 (1998)
177. “The structural evolution of seed surfaces during the initial stages of Physical Vapor Transport SiC growth”, V. D. Heydemann, E. Sanchez, G. S. Rohrer, and M. Skowronski, Mat. Res. Soc. Symp. Proc. 483, 295 (1998)
178. “ICP dry etching of III-V nitrides”, C. B. Vartuli, J. W. Lee, J. D. McKenzie, S. M. Donovan, C. R. Abernathy, S. J. Pearton, R. J. Shul, C. Constantine, C. Barrat, A. Katz, A. Y. Polyakov, M. Shin, and M. Skowronski, Mat. Res. Soc. Symp. Proc. 483, 295 (1998)
179. “Reconstructions of GaN(0001) and (000-1) surfaces: Ga-rich metallic structures”, A. R. Smith, R. M. Feenstra, D. W. Greve, M. S. Shin, M. Skowronski, J, Neugebauer, J. E. Northrop, J. Vac. Sci. Technol. B 16, 2242 (1998)
180. “Scanning electron microscope studies of AlGaN films grown by organometallic vapor phase epitaxy” A. Y. Polyakov, A. V. Govorkov, N. B. Smirnov, M. G. Milvidskii, J. M. Redwing, M. Shin, M. Skowronski, and D. W. Greve, Solid-State Electronics 42, 637 (1998)
181. “Structural characterization of SiC crystals grown by Physical Vapor Transport”, E. Sanchez, V. D. Heydemann, G. S. Rohrer, M. Skowronski, J. Solomon, M. A. Capano, and W. C. Mitchel, Mater. Sci. Forum 264-268, 433 (1998)
182. “Combined lattice parameter mapping and x-ray topography of SiC substrates” C. D. Moore, M. S. Goorsky, and M. Skowronski, Proc. Int. Conf. on X-ray characterization of Materials, Durham, England, 1998
183. "Growth of AlBN solid solutions by organometallic vapor-phase epitaxy", A. Y. Polyakov, M. Shin, M. Skowronski, D. W. Greve, and R. G. Wilson, J. Appl. Phys. 81, 1715 (1997)
184. "HRTEM characterization of 6H-15R polytype boundaries in silicon carbide grown by physical vapor transport", E. K. Sanchez, M. De Graef, W. Qian, and M. Skowronski, Mat. Res. Soc. Symp. Proc. 442, 655 (1997)
185. "Studies of electrically and recombination active centers in undoped GaN grown by OMVPE", A. Y. Polyakov, A. V. Govorkov, N. B. Smirnov, M. Shin, M. Skowronski, and D. W. Greve, Mat. Res. Soc. Symp. 449, 591 (1997)
186. "Growth of AlBN solid solution by OMVPE" M. Shin, A. Y. Polyakov, W. Qian, M. Skowronski, D. W. Greve, and R. G. Wilson, Mat. Res. Soc. Symp. 449, 141 (1997)
187. “Nucleation of misfit and threading dislocations during epitaxial growth of GaSb on GaAs(001) substrates” W. Qian, M. Skowronski, R. Kaspi, M. De Graef, and V. P. Dravid, J. Appl. Phys. 81, 7268 (1997)
188. “Growth of GaBN ternary solutions by Organometallic Vapor Phase Epitaxy” A. Y. Polyakov, M. Shin, M. Skowronski, D. W. Greve, R. G. Wilson, A. V. Govorkov, R. M. Derosiers, J. Electron. Materials 26, 237 (1997)
189. "High resolution x-ray diffraction analysis of GaN-based heterostructures grown by OMVPE" M. S. Goorsky, A. Y. Polyakov, M. Skowronski, M. Shin, and D. W. Greve, Mat. Res. Soc. Symp. 449, 489 (1997)
190. “Ion implantation of Si, Mg, and C into Al0.12Ga0.88N” A. Y. Polyakov, M. Shin, M. Skowronski, R. G. Wilson, D. W. Greve, and S. J. Pearton, Solid-State Electronics 41, 703 (1997)
191. “Dislocation density reduction in GaSb films grown on GaAs substrates by Molecular Beam Epitaxy” W. Qian, M. Skowronski, and R. Kaspi, J. Electrochem. Soc. 144, 1430 (1997)
192. “Growth of AlBN solid solutions by organometallic vapor-phase epitaxy” A. Y. Polyakov, M. Shin, W. Qian, M. Skowronski, D. W. Greve, and R. G. Wilson, J. Appl. Phys. 81, 1715 (1997)
193. “An atomic force microscopy study of super-dislocation / micropipe complexes on the 6H-SiC(0001) growth surface” J. Giocondi, G. S. Rohrer, M. Skowronski, V. Balakrishna, G. Augustine, H. M. Hobgood, and R. H. Hopkins, J. Crystal Growth 181, 351 (1997)
194. "The role of residual impurities in SiC grown by physical vapor transport" R. C. Glass, G. Augustine, V. Balakrishna, H. Mc. Hobgood, R. H. Hopkins, J. Jenny, M. Skowronski, and W. J. Choyke, Inst. Phys. Conf. Ser. 142, 37 (1996)
195. "Electronic properties of semi-insulating vanadium-doped 6H-SiC" W. C. Mitchel, M. Roth, A. O. Evwaraye, P. W. Yu, S. R. Smith, J, Jenny, M. Skowronski, H. McD. Hobgood, R. C. Glass, G. Augustine, R. H. Hopkins, Inst. Phys. Conf. Ser. 142, 313 (1996)
196. "Optical and electrical characterization of boron impurities in silicon carbide grown by physical vapor transport" J. R. Jenny, M. Skowronski, W. C. Mitchel, H. M. Hobgood, R. C. Glass, G. Augustine, and R. H. Hopkins, J. Appl. Phys. 79, 2326 (1996)
197. "Deep level transient spectroscopic and Hall effect investigation of the position of the vanadium acceptor level in 4H and 6H SiC" J. R. Jenny, M. Skowronski, W. C. Mitchel, H. M. Hobgood, R. C. Glass, G. Augustine, and R. H. Hopkins, Appl. Phys. Lett. 68, 1963 (1996)
198. "Nucleation of misfit and threading dislocations in GaSb/GaAs(001) heterostructure" W. Qian, M. Skowronski, R. Kaspi, and M. DeGraef, Proc. Microscopy and Microanalysis 1996, ed. G. W. Bailey, J. M. Corbett, R. V. W. Dimlich, J. R. Michael, and N. J. Zaluzec, San Francisco Press, San Francisco, 1996
199. "A microscopic evaluation of the surface structure of OMVPE deposited a-GaN epilayers" G. S. Rohrer, J. Payne, W. Qian, M. Skowronski, K. Doverspike, L. B. Rowland, and D. K. Gaskill, Mat. Res. Soc. Symp. Proc. 395, 381 (1996)
200. "Structural defects and their relationship to nucleation of GaN thin films" W. Qian, M. Skowronski, and G. S. Rohrer, Mat. Res. Symp. Proc. 423, 475 (1996)
201. "Electrical and optical investigation of the position of vanadium related defects in the 4H and 6H SiC bandgaps" J. R. Jenny, M. Skowronski, W. C. Mitchel, S. R. Smith, A. O. Evwaraye, H. M. Hobgood, G. Augustine, and R. H. Hopkins, Mat. Res. Symp. Proc. 423, 507 (1996)
202. "The relationship between micropipes and screw dislocations in PVT grown 6H-SiC" J. Giocondi, G. S. Rohrer, M. Skowronski, V. Balakrishna, G. Augustine, H. M. Hobgood, and R. H. Hopkins, Mat. Res. Symp. Proc. 423, 539 (1996)
203. "Factors influencing the electrical and optical properties of AlGaN layers on sapphire" M. Shin, A. Y. Polyakov, M. Skowronski, D. W. Greve, R. G. Wilson, J. A. Freitas, Mat. Res. Symp. Proc. 423, 643 (1996)
204. "The influence of hydrogen plasma on electrical and optical properties of AlGaN samples grown on sapphire" A. Y. Polyakov, M. Shin, S. J. Pearton, M. Skowronski, D. W. Greve, and J. A. Freitas, Mat. Res. Soc. Symp. Proc. 423, 607 (1996)
205. "On the origin of electrically active defects in AlGaN alloys grown by organometallic vapor phase epitaxy" A. Y. Polyakov, M. Shin, J. A. Freitas, M. Skowronski, D. W. Greve, and R. G. Wilson, J. Appl. Phys. 80, 6349 (1996)
206. "High resistivity AlxGa1-xN layers grown by MOCVD" A. Y. Polyakov, M. Shin, D. W. Greve, M. Skowronski, and R. G. Wilson, MRS Internet Journal, Nitride Semiconductor Research, 1, art 36 (1996)
207. "Precipitation of second phases in heavily doped dimethyltellurium-doped GaAs during OMVPE growth" Y. Park, W. Qian, and M. Skowronski, J. Electrochem. Soc. 142, 4294 (1995)
208. "Characterization of polishing-related surface damage in (0001) silicon carbide substrates" W. Qian, M. Skowronski, G. Augustine, R. C. Glass, H. M. Hobgood, and R. H. Hopkins, J. Electrochem. Soc. 142, 4290 (1995)
209. "Surfactant-mediated growth of AlGaAs by molecular beam epitaxy" R. Kaspi, D. C. Reynolds, K. R. Evans, J. Brown, and M. Skowronski, Mat. Res. Soc. Symp. Proc. 379, 79 (1995)
210. "Dynamics of surface segregation during InGaAs MBE" K. R. Evans, R. Kaspi, J. E. Ehret, and M. Skowronski, Mat. Res. Soc. Symp. Proc. 379, 505 (1995)
211. "Electronic properties of boron in p-type bulk 6H-SiC" W. C. Mitchel, M. Roth, E. O. Evwaraye, P. W. Yu, S. R. Smith, J. R. Jenny, and M. Skowronski, Proceedings of Workshop on High Temperature Electronics and Electrical Vehicles, Fort Monmouth, NJ, 1995
212. "Atomic structure of deep level defects in dimethylaluminum methoxide-doped GaAs" Y. Park and M. Skowronski, Mat. Res. Soc. Symp. Proc., 378, 159 (1995)
213. "Open-core screw dislocations in GaN epilayers observed by scanning force microscopy and high resolution transmission electron microscopy" W. Qian, G. S. Rohrer, M. Skowronski, K. Doverspike, L. B. Rowland, and D. K. Gaskill, Appl. Phys. Lett. 67, 2284 (1995)
214. "On the compensation mechanism in high-resistivity 6H-SiC doped with vanadium" J. R. Jenny, M. Skowronski, W. C. Mitchel, H. M. Hobgood, R. C. Glass, G. Augustine, and R. H. Hopkins, J. Appl. Phys. 78, 3839 (1995)
215. "TEM and AFM studies of structural defects in a-GaN films" W. Qian, M. Skowronski, M. De Graef, G. Rohrer, K. Doverspike, L. B. Rowland, and D. K. Gaskill, Proc. Microscopy and Microanalysis 1995, ed. G. W. Bailey, M. H. Ellisman, R. A. Hennigar, and N. J. Zaluzec, p. 456, Jones and Begell Publishing, New York, 1995
216. "TEM characterization of subsurface damage in silicone carbide substrates" W. Qian, M. Skowronski, G. Augustine, R. C. Glass, H. Mc. Hobgood, and R. H. Hopkins, Proc. Microscopy and Microanalysis 1995, ed. G. W. Bailey, M. H. Ellisman, R. A. Hennigar, and N. J. Zaluzec, p. 474, Jones and Begell Publishing, New York, 1995
217. "Vanadium related near-band-edge absorption bands in three SiC polytypes" J. R.. Jenny, M. Skowronski, W. C. Mitchel, H. M. Hobgood, R. C. Glass, G. Augustine, and R. H. Hopkins, J. Appl. Phys. 78, 3160 (1995)
218. "Surface chemistry evolution during MBE growth of InGaAs" K. R. Evans, R. Kaspi, J. E. Ehret, M. Skowronski, and C. R. Jones, J. Vac. Sci. Technol. B 13, 1820 (1995)
219. "Pressure as a probe of deep levels and defects in semiconductors: antisites and oxygen centers in GaAs" G. A. Samara, M. Skowronski, and W. C. Mitchel, J. Phys. Chem. Solids 56, 625 (1995)
220. "Deep-center oxygen related photoluminescence in GaAs doped with dimethylaluminum methoxide during organometallic vapor phase epitaxy" P. Yu, Y. Park, M. Skowronski, and M. L. Timmons, J. Appl. Phys. 78, 2015 (1995)
221. "Observation of nanopipes in a-GaN crystals" W. Qian and M. Skowronski, K. Doverspike, L. B. Rowland and D. K. Gaskill, J. Crystal Growth 151, 396 (1995)
222. "Semi-insulating 6H-SiC grown by physical vapor transport" H. M. Hobgood, R. C. Glass, G. Augustine, R. H. Hopkins, J. Jenny, M. Skowronski, W. C. Mitchel, and M. Roth, Appl. Phys. Lett. 66, 1364 (1995)
223. "Microstructural characterization of a-GaN films grows on Sapphire by Organometallic Vapor Phase Epitaxy" W. Qian, M. Skowronski, M. De Graef , K. Doverspike, L. B. Rowland and D. K. Gaskill, Appl. Phys. Lett. 66, 1252 (1995)
224. "Incorporation of aluminum and oxygen in dimethylaluminum methoxide doped GaAs during organometallic vapor phase epitaxy" Y. Park, M. Skowronski, and T. M. Rosseel, J. Crystal Growth 137, 442 (1994)
225. "Mechanism for CuPt-type ordering in mixed III-V epitaxial layers" B. A. Philips, A. G. Norman, T. Y. Seong, S. Mahajan, G. R. Booker, M. Skowronski, J. P. Harbison, and V. G. Keramidas, J. Crystal Growth 140, 249 (1994)
226. "Compensation of shallow donors in dimethylaluminum methoxide-doped GaAs" Y. Park and M. Skowronski, J. Appl. Phys. 76, 5813 (1994)
227. "Photoluminescence of GaAs epilayers doped with dimethylaluminum methoxide during organometallic vapor phase epitaxy" Y. Park and M. Skowronski, J. Appl. Phys. 75, 2640 (1994)
228. "Oxygen doping of GaAs during OMVPE; Controlled introduction of impurity complexes" Y. Park, M. Skowronski, T. S. Rosseel, and M. O. Manasreh, Mat. Res. Soc. Symp. Proc. 325, 293 (1994)
229. "Band edge optical absorption of molecular beam epitaxial GaSb grown on semi-insulating GaAs substrate" M. Shah, M. O. Manasreh, R. Kaspi, M. Y. Yen, B. A. Philips, M. Skowronski, and J. Shinar, Mat. Res. Soc. Symp. Proc. 325, 449 (1994)
230. "Influence of growth temperature on ordering in InGaAs grown on (001) InP using tertiarybutylarsine source MOCVD" R. S. McFadden, M. Skowronski, and S. Mahajan, Mat. Res. Soc. Symp. Proc. 326, 287 (1994)
231. "Large diameter 6H-SiC crystal growth for microwave device applications" H. M. Hobgood, J. P. McHugh, J. Greggi, R. H. Hopkins, and M. Skowronski, Inst. Phys. Conf. Ser. 137, 7 (1994)
232. "Effect of growth temperature on GaN films grown on GaN buffer layers" L. B. Rowland, K. Doverspike, A. Giordana, M. Fatemi, D. K. Gaskill, M. Skowronski, J. A. Freitas, Inst. Phys. Conf. Ser. 137, 429 (1994)
233. "Subsurface polishing-induced damage in silicon carbide crystals" A. Evayraye, S. Smith, M. Skowronski, W. C. Mitchel , J. Appl. Phys. 74, 5269 (1993)
234. "Alkoxide doping of GaAs during Organometallic Vapor Phase Epitaxy" Y. Park, M. Skowronski, T. M. Rosseel, Mat. Res. Soc. Symp. Proc. 282, 75-80 (1993)
235. "Oxygen related point defects in GaAs" M. Skowronski, Materials Science Forum 83, 377 (1991)
236. "On quantitative mapping of EL2 concentration in semi-insulating GaAs wafers" U. V. Desnica, B. G. Petrovic, M. Skowronski, and M. C. Cretella, J. Phys. III France, 1, 1481 (1991)
237. "Effects of thermal annealing on oxygen related centers in GaAs" M. Skowronski and R. E. Kremer, J. Appl. Phys. 69, 7825 (1991)
238. "Calibration of the isolated oxygen interstitial localized vibrational mode absorption line in GaAs" M. Skowronski, S. T. Neild, and R. E. Kremer, Appl. Phys. Lett. 58, 1545 (1991)
239. "Complexes of oxygen and native defects in GaAs” M. Skowronski, Physical Review B 46, 9476 (1992)
240. "Signature of the gallium-oxygen-gallium defect in GaAs by deep level transient spectroscopy measurements" S. T. Neild, M. Skowronski, and R. E. Kremer, Appl. Phys. Lett. 58, 859 (1990)
241. "Absorption spectrum of EL2 defect in p-type GaAs" M. Skowronski, J. Appl. Phys. 68, 3741 (1990)
242. "Location of energy levels of oxygen-vacancy complex in GaAs" M. Skowronski, S. T. Neild, and R. E. Kremer, Appl. Phys. Lett. 57, 902 (1990)
243. “On the origin of EL2 intracenter absorption band in GaAs" M. Skowronski, Mat. Res. Soc. Symp. Proc. 104, 405 (1988)
244. "The effects of plastic deformation on electronic properties of GaAs" M. Skowronski, J. Lagowski, M. Milshtein, C. H. Kang, F. Dabkowski, and H. C. Gatos, Inst. Phys. Conf. Ser. 91, 93 (1987)
245. "Quantitative correlation between the EL2 midgap donor, the 1.039 eV zero phonon line, and the EPR arsenic antisite signal" J. Lagowski, M. Matsui, M. Bugajski, C. H. Kang, M. Skowronski, and H. C. Gatos, and M. Hoinkis, E. R. Weber, and W. Walukiewicz, Inst. Phys. Conf. Ser. 91, 395, (1987)
246. "Scanning photoluminescence measurements of GaAs wafers" M. Skowronski and M. Bugajski, Defect Recognition and Image Processing in III-V Compounds, ed. E. R. Weber Elsevier Science Publishers, Amsterdam, 1987, p. 241
247. "Effect of plastic deformation on electronic properties of GaAs" Skowronski, J. Lagowski, M. Milshtein, C. H. Kang, F. P. Dabkowski, A. Hennel, and H. C. Gatos, J. Appl. Phys. 62, 3791 (1987)
248. "Inverted thermal conversion - GaAs, a new alternative material for integrated circuits" J. Lagowski, H. C. Gatos, C. H. Kang, M. Skowronski, and D. G. Lin, Appl. Phys. Lett. 49, 892 (1986)
249. "Optical and transient capacitance study of EL2 in the absence and presence of the other midgap levels" M. Skowronski, J. Lagowski, and H. C. Gatos, J. Appl. Phys. 59, 2451 (1986)
250. "The compensation mechanism in undoped semi-insulating GaAs grown by the Heat Exchanger Method" J. H. Wohlgemuth, C. P. Khattak, J. Lagowski, and M. Skowronski, Proc. Semi-Insulating III-V Materials, p. 191 Ohmsha Ltd 1986
251. "Effective deactivation of the ZnS visible photoluminescence by iron impurities" M. Godlewski and M. Skowronski, Phys. Rev. B 32, 4007 (1985)
252. "Uniaxial stress effect on no-phonon lines of 3T1-5E transitions in ZnS:Fe" M. Skowronski, Z. Liro, and W. Palosz, J. Phys. C 18, 5099 (1985)
253. "High resolution optical study of the antisite defect AsGa; Correlation with midgap level EL2" M. Skowronski, D. G. Lin, J. Lagowski, L. M. Pawlowicz, K. Y. Ko, and H. C. Gatos, Mat. Res. Soc. Symp. Proc. 46, 207 (1985)
254. "Metastability of the midgap level EL2 in GaAs: relationship with the As antisite defect" M. Skowronski, J. Lagowski, and H. C. Gatos, Phys. Rev. B 32, 4264 (1985)
255. "Native hole trap in bulk GaAs and its association with the double-charge state of the arsenic antisite defect" J. Lagowski, D. G. Lin, T. P. Chen, M. Skowronski, and H. C. Gatos, Appl. Phys. Lett. 47, 929 (1985)
256. "Identification of the 0.82 eV electron trap, EL2 in GaAs, as an isolated antisite arsenic defect" M. Kaminska, M. Skowronski, and W. Kuszko, Phys. Rev. Lett. 55, 2204 (1985)
257 “Oxygen in GaAs; direct and indirect effects" H. C. Gatos, M. Skowronski, L. Pawlowicz, and J. Lagowski, Inst. Phys. Conf. Ser. 74, 41 (1984)
258. "Technological and physical aspects of the main EL2 defect in GaAs" M. Kaminska, M. Skowronski, W. Kuszko, J. Lagowski, J. M. Parsey, and H. C. Gatos, Czech. J. Phys. B 34, 409 (1984)
259. "On the position of the Fe2+ energy level in ZnS" M. Skowronski and M. Godlewski, J. Phys. C 17, 2901 (1984)"The role of iron impurity in the radiative processes in zinc sulfide" M. Godlewski, M. Skowronski, Proc. Conf. Phys. 6, 244 (1983)
260. "Intracenter transitions in the dominant deep level (EL2) in GaAs" M. Kaminska, M. Skowronski, J. Lagowski, J. M. Parsey, and H. C. Gatos, Appl. Phys. Lett. 43, 302 (1983)
261. "Spin-forbidden transitions in the Fe2+ ion in ZnS crystals" M. Skowronski and Z. Liro, J. Phys. C 15, 137 (1982)
262. "Triplet to quintet luminescence of Fe2+ center in ZnS" M. Skowronski and Z. Liro, J. Lumin. 24/25, 253 (1981)
263. "The iron ion energy level scheme in zinc sulfide crystals" M. Skowronski, M. Godlewski, and Z. Liro, Proc. Conf. Phys. 2, 112 (1981)