Carnegie Mellon University

Marek Skowronski

Marek Skowronski

Professor, Materials Science and Engineering


Professor Skowronski obtained his Ph.D. degree in Solid State Physics from Warsaw University (Warsaw, Poland) for work on transition metal ions in semiconductors. His post-doctoral appointment was in H. C. Gatos's Electronic Materials Group at Massachusetts Institute of Technology where he investigated native point defects in GaAs. In 1986, he joined Cabot Corporation (Billerica, MA) to work on crystal growth of III-V semiconductors. In 1988, he moved to Carnegie Mellon University. His research projects covers epitaxy of semiconductors and oxide films, electron microscopy of processing- and operation- induced defects, and processing of electronic devices.  Prof. Skowronski currently serves as Associate Editor of Journal of Crystal Growth. He has authored over 240 publications.


Ph.D., Warsaw University


We aim to discover, understand, and exploit novel materials and phenomena that will let us manipulate charge and spin of electrons, or phase of materials. The work is motivated by applications for high-performance dense storage class-memory, ultra-low power electronics for mobile devices, nano-scale phenomena in devices, and energy scavenging and conversion. The overarching driving force for the group's research is the energy efficient electronics.

The group's research interests stretch from:

(i) electronic materials: synthesis of thin films and hetero-structures; integration of 2D materials, such as graphene, and oxide templates; in situ electron microscopy of devices under bias.

(ii) nanoscale devices such as memristors, sensors, and magnetic tunnel junctions. Heterogeneous integration of CMOS circuits and novel technologies.

(iii) condensed matter physics (in situ surface science, band structure mapping, charge and spin transport at nanoscale). The sought after materials/characteristics include half-metals with fully spin polarized electrons, quantum spin Hall insulators, and materials with Dirac massless electrons.

Most projects are highly collaborative. Ongoing collaborations include Intel, Micron, IMEC, Arizona State University and University of Michigan.


"Oxygen vacancy creation, drift, and aggregation in TiO2-based resistive switches at low temperature and voltage", J. Kwon, A. A. Sharma, J. A. Bain, Y. N. Picard and M. Skowronski, Adv. Funct. Mater. 25, 2876 (2015)

"Thermometry of Filamentary RRAM Devices", E. Yalon, A. A. Sharma, M. Skowronski, J. A. Bain, D. Ritter, and I. V. Karpov, " IEEE Trans. Electron Dev. 62, 2972 (2015)

"High-Frequency TaOx-Based Compact Oscillators", A. A. Sharma, Y. Li, M. Skowronski, J. A. Bain, and J. A. Weldon, IEEE Trans. Electron Dev. 62, 3857 (2015)

"Dynamics of electroforming in binary metal oxide-based resistive switching memory", A. A. Sharma, I. V. Karpov, R. Kotlyar, J. Kwon, M. Skowronski, and J. A. Bain, J. Appl. Phys.  118, 114903 (2015)

"Glide of threading edge dislocations after basal plane dislocation conversion during 4H-SiC epitaxial growth"M. Abadier, H. Song, T. S. Sudarshan, Y. N. Picard, and M. Skowronski, J. Crystal Growth 418, 7 (2015)

"Oxygen vacancies on SrO-terminated SrTiO3(001) sufaces studied by scanning tunneling microscopy", W. Sitaputra, N. Sivadas, M. Skowronski, D. Xiao, and R. M. Feenstra, Phys. Rev. B 91, 205408 (2015)

"Topographic and electronic structure of cleaved SrTiO3(001) surfaces", W. Sitaputra, M. Skowronski, and R. M. Feenstra, J. Vac. Sci. Technol. A 33, 031402 (2015)

"In situ TEM imaging of defect dynamics under electrical bias in resistive switching rutile-TiO2", R. J. Kamaladasa, A. A. Sharma, Y. T. Lai, W. Chen, P. A. Salvador, J. A. Bain, M. Skowronski and Y. N. Picard, Microscopy and Microanalysis 21, 140 (2015)

"Electronic instabilities leading to electroformation of binary metal oxide-based resistive switches", A. A. Sharma, M. Noman, M. Adbelmoula, M. Skowronski, and J. A. Bain, Adv. Funct. Mater. 24, 5522 (2014)

"Mechanism of localized electrical conduction at the onset of electroforming in TiO2 based resistive switching devices", M. Noman, A. A. Sharma, Y. M. Lu, R. Kamaladasa, M. Skowronski, P. A. Salvador, and J. A. Bain, Appl. Phys. Lett. 104, 113510 (2014)